High external quantum efficiency in InGaN-based green micro-light emitting diodes at ultra-low current density by removing pre-wells
InGaN-based green light-emitting diodes with different pre-well numbers were grown by an organometallic vapor phase epitaxy deposition method on patterned sapphire substrates. Micro-LED chips with a size of 17 × 20 μm ^2 were fabricated, and a peak external quantum efficiency (EQE) of 39% was achiev...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/ada689 |
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| author | Aimin Wang Kaixuan Chen Junyong Kang |
| author_facet | Aimin Wang Kaixuan Chen Junyong Kang |
| author_sort | Aimin Wang |
| collection | DOAJ |
| description | InGaN-based green light-emitting diodes with different pre-well numbers were grown by an organometallic vapor phase epitaxy deposition method on patterned sapphire substrates. Micro-LED chips with a size of 17 × 20 μm ^2 were fabricated, and a peak external quantum efficiency (EQE) of 39% was achieved at ultra-low current density of 0.07 A cm ^−2 . The EQE variation curves of different samples were studied under different current densities. It was confirmed that by reducing the number of pre-wells the Shockley–Read–Hall non-radiative recombination under ultra-low current density was suppressed, which ultimately results in a high EQE of micro-LEDs. |
| format | Article |
| id | doaj-art-6477745ee263445e854753ccbd3e7511 |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-6477745ee263445e854753ccbd3e75112025-01-20T14:47:19ZengIOP PublishingApplied Physics Express1882-07862025-01-0118101100110.35848/1882-0786/ada689High external quantum efficiency in InGaN-based green micro-light emitting diodes at ultra-low current density by removing pre-wellsAimin Wang0Kaixuan Chen1Junyong Kang2Engineering Research Centre of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Centre for OSED, Department of Physics, Xiamen University , Xiamen, People’s Republic of ChinaXiamen Changelight Co., Ltd, Xiamen, Fujian Province 361101, People’s Republic of ChinaEngineering Research Centre of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Centre for OSED, Department of Physics, Xiamen University , Xiamen, People’s Republic of ChinaInGaN-based green light-emitting diodes with different pre-well numbers were grown by an organometallic vapor phase epitaxy deposition method on patterned sapphire substrates. Micro-LED chips with a size of 17 × 20 μm ^2 were fabricated, and a peak external quantum efficiency (EQE) of 39% was achieved at ultra-low current density of 0.07 A cm ^−2 . The EQE variation curves of different samples were studied under different current densities. It was confirmed that by reducing the number of pre-wells the Shockley–Read–Hall non-radiative recombination under ultra-low current density was suppressed, which ultimately results in a high EQE of micro-LEDs.https://doi.org/10.35848/1882-0786/ada689InGaNmicro-LEDprewellsV-pitsexternal quantum efficiency |
| spellingShingle | Aimin Wang Kaixuan Chen Junyong Kang High external quantum efficiency in InGaN-based green micro-light emitting diodes at ultra-low current density by removing pre-wells Applied Physics Express InGaN micro-LED prewells V-pits external quantum efficiency |
| title | High external quantum efficiency in InGaN-based green micro-light emitting diodes at ultra-low current density by removing pre-wells |
| title_full | High external quantum efficiency in InGaN-based green micro-light emitting diodes at ultra-low current density by removing pre-wells |
| title_fullStr | High external quantum efficiency in InGaN-based green micro-light emitting diodes at ultra-low current density by removing pre-wells |
| title_full_unstemmed | High external quantum efficiency in InGaN-based green micro-light emitting diodes at ultra-low current density by removing pre-wells |
| title_short | High external quantum efficiency in InGaN-based green micro-light emitting diodes at ultra-low current density by removing pre-wells |
| title_sort | high external quantum efficiency in ingan based green micro light emitting diodes at ultra low current density by removing pre wells |
| topic | InGaN micro-LED prewells V-pits external quantum efficiency |
| url | https://doi.org/10.35848/1882-0786/ada689 |
| work_keys_str_mv | AT aiminwang highexternalquantumefficiencyininganbasedgreenmicrolightemittingdiodesatultralowcurrentdensitybyremovingprewells AT kaixuanchen highexternalquantumefficiencyininganbasedgreenmicrolightemittingdiodesatultralowcurrentdensitybyremovingprewells AT junyongkang highexternalquantumefficiencyininganbasedgreenmicrolightemittingdiodesatultralowcurrentdensitybyremovingprewells |