Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

Two-dimensional (2D) layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR) properties of a black phosphorus (BP) spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnet...

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Bibliographic Details
Main Authors: Leilei Xu, Jiafeng Feng, Kangkang Zhao, Weiming Lv, Xiufeng Han, Zhongyuan Liu, Xiaohong Xu, He Huang, Zhongming Zeng
Format: Article
Language:English
Published: Wiley 2017-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2017/9042823
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