Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices
Two-dimensional (2D) layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR) properties of a black phosphorus (BP) spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnet...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2017-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2017/9042823 |
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| _version_ | 1832558531851583488 |
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| author | Leilei Xu Jiafeng Feng Kangkang Zhao Weiming Lv Xiufeng Han Zhongyuan Liu Xiaohong Xu He Huang Zhongming Zeng |
| author_facet | Leilei Xu Jiafeng Feng Kangkang Zhao Weiming Lv Xiufeng Han Zhongyuan Liu Xiaohong Xu He Huang Zhongming Zeng |
| author_sort | Leilei Xu |
| collection | DOAJ |
| description | Two-dimensional (2D) layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR) properties of a black phosphorus (BP) spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM) electrodes. The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4 K and 0.23% at 300 K. In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes. |
| format | Article |
| id | doaj-art-62743d71ab1f4d3388253040ad6734de |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-62743d71ab1f4d3388253040ad6734de2025-02-03T01:32:12ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242017-01-01201710.1155/2017/90428239042823Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve DevicesLeilei Xu0Jiafeng Feng1Kangkang Zhao2Weiming Lv3Xiufeng Han4Zhongyuan Liu5Xiaohong Xu6He Huang7Zhongming Zeng8School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 41004, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, ChinaState Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaState Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, ChinaSchool of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 41004, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, ChinaTwo-dimensional (2D) layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR) properties of a black phosphorus (BP) spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM) electrodes. The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4 K and 0.23% at 300 K. In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes.http://dx.doi.org/10.1155/2017/9042823 |
| spellingShingle | Leilei Xu Jiafeng Feng Kangkang Zhao Weiming Lv Xiufeng Han Zhongyuan Liu Xiaohong Xu He Huang Zhongming Zeng Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices Advances in Condensed Matter Physics |
| title | Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices |
| title_full | Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices |
| title_fullStr | Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices |
| title_full_unstemmed | Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices |
| title_short | Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices |
| title_sort | magnetoresistance effect in nife bp nife vertical spin valve devices |
| url | http://dx.doi.org/10.1155/2017/9042823 |
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