Modeling Surface Recombination at the p-Type Si/SiO2Interface via Dangling Bond Amphoteric Centers
An integral model is proposed for recombination at the silicon/silicon dioxide (Si/SiO2) interface of thermally oxidized p-type silicon via Pb amphoteric centers associated with surface dangling bonds. The proposed model is a surface adaptation of a model developed for bulk recombination in amorphou...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
|
| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2014/857907 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|