APA (7th ed.) Citation

Poklonski, N. A., Kovalev, A. I., Gorbachuk, N. I., & Shpakovski, S. V. CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION. Belarusian National Technical University.

Chicago Style (17th ed.) Citation

Poklonski, N. A., A. I. Kovalev, N. I. Gorbachuk, and S. V. Shpakovski. CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC P–n-JUNCTION. Belarusian National Technical University.

MLA (9th ed.) Citation

Poklonski, N. A., et al. CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC P–n-JUNCTION. Belarusian National Technical University.