Improving radiation tolerance with room temperature annealing of pre-existing defects
Pre-existing defects in semiconductor devices can act as nucleation sites for radiation damage. Defects generated from mismatches in lattice constant, stiffness and thermal expansion are difficult to eliminate with thermal annealing. We propose a non-thermal stimulus, the electron wind force, to red...
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Format: | Article |
Language: | English |
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IOP Publishing
2025-01-01
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Series: | Applied Physics Express |
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Online Access: | https://doi.org/10.35848/1882-0786/adab50 |
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author | Md Hafijur Rahman Felix Cooper Miguel L. Crespillo Khalid Hattar Aman Haque Fan Ren Stephen Pearton Douglas Wolfe |
author_facet | Md Hafijur Rahman Felix Cooper Miguel L. Crespillo Khalid Hattar Aman Haque Fan Ren Stephen Pearton Douglas Wolfe |
author_sort | Md Hafijur Rahman |
collection | DOAJ |
description | Pre-existing defects in semiconductor devices can act as nucleation sites for radiation damage. Defects generated from mismatches in lattice constant, stiffness and thermal expansion are difficult to eliminate with thermal annealing. We propose a non-thermal stimulus, the electron wind force, to reduce the pre-existing defect concentration in Zener diodes at room temperature in a minute. The pristine and pre-annealed diodes were exposed to 11 MeV Au ^3+ ions at different fluences to induce damage levels of 0.2, 2, 10 and 20 displacement per atom (dpa). Post irradiation characterization showed up to 10 times improvement in radiation tolerance in the pre-annealed devices. |
format | Article |
id | doaj-art-61fbfb9d8c814483b4601f2db34ba14e |
institution | Kabale University |
issn | 1882-0786 |
language | English |
publishDate | 2025-01-01 |
publisher | IOP Publishing |
record_format | Article |
series | Applied Physics Express |
spelling | doaj-art-61fbfb9d8c814483b4601f2db34ba14e2025-01-29T04:20:16ZengIOP PublishingApplied Physics Express1882-07862025-01-0118101700110.35848/1882-0786/adab50Improving radiation tolerance with room temperature annealing of pre-existing defectsMd Hafijur Rahman0Felix Cooper1Miguel L. Crespillo2Khalid Hattar3Aman Haque4https://orcid.org/0000-0001-6535-5484Fan Ren5Stephen Pearton6https://orcid.org/0000-0001-6498-1256Douglas Wolfe7Department of Mechanical Engineering, Penn State University , University Park, PA 16802, United States of AmericaDepartment of Mechanical Engineering, Penn State University , University Park, PA 16802, United States of AmericaDepartment of Nuclear Engineering, University of Tennessee , Knoxville, TN 37996, United States of AmericaDepartment of Nuclear Engineering, University of Tennessee , Knoxville, TN 37996, United States of AmericaDepartment of Mechanical Engineering, Penn State University , University Park, PA 16802, United States of AmericaDepartment of Chemical Engineering, University of Florida , Gainesville, FL 32611, United States of AmericaDepartment of Material Science and Engineering, University of Florida , Gainesville, FL 32611, United States of AmericaDepartment of Materials Science & Engineering, Penn State University , University Park, PA 16802, United States of AmericaPre-existing defects in semiconductor devices can act as nucleation sites for radiation damage. Defects generated from mismatches in lattice constant, stiffness and thermal expansion are difficult to eliminate with thermal annealing. We propose a non-thermal stimulus, the electron wind force, to reduce the pre-existing defect concentration in Zener diodes at room temperature in a minute. The pristine and pre-annealed diodes were exposed to 11 MeV Au ^3+ ions at different fluences to induce damage levels of 0.2, 2, 10 and 20 displacement per atom (dpa). Post irradiation characterization showed up to 10 times improvement in radiation tolerance in the pre-annealed devices.https://doi.org/10.35848/1882-0786/adab50radiation tolerancezener diodeselectron wind forceheavy ion irradiation |
spellingShingle | Md Hafijur Rahman Felix Cooper Miguel L. Crespillo Khalid Hattar Aman Haque Fan Ren Stephen Pearton Douglas Wolfe Improving radiation tolerance with room temperature annealing of pre-existing defects Applied Physics Express radiation tolerance zener diodes electron wind force heavy ion irradiation |
title | Improving radiation tolerance with room temperature annealing of pre-existing defects |
title_full | Improving radiation tolerance with room temperature annealing of pre-existing defects |
title_fullStr | Improving radiation tolerance with room temperature annealing of pre-existing defects |
title_full_unstemmed | Improving radiation tolerance with room temperature annealing of pre-existing defects |
title_short | Improving radiation tolerance with room temperature annealing of pre-existing defects |
title_sort | improving radiation tolerance with room temperature annealing of pre existing defects |
topic | radiation tolerance zener diodes electron wind force heavy ion irradiation |
url | https://doi.org/10.35848/1882-0786/adab50 |
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