Improving radiation tolerance with room temperature annealing of pre-existing defects

Pre-existing defects in semiconductor devices can act as nucleation sites for radiation damage. Defects generated from mismatches in lattice constant, stiffness and thermal expansion are difficult to eliminate with thermal annealing. We propose a non-thermal stimulus, the electron wind force, to red...

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Main Authors: Md Hafijur Rahman, Felix Cooper, Miguel L. Crespillo, Khalid Hattar, Aman Haque, Fan Ren, Stephen Pearton, Douglas Wolfe
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
Online Access:https://doi.org/10.35848/1882-0786/adab50
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author Md Hafijur Rahman
Felix Cooper
Miguel L. Crespillo
Khalid Hattar
Aman Haque
Fan Ren
Stephen Pearton
Douglas Wolfe
author_facet Md Hafijur Rahman
Felix Cooper
Miguel L. Crespillo
Khalid Hattar
Aman Haque
Fan Ren
Stephen Pearton
Douglas Wolfe
author_sort Md Hafijur Rahman
collection DOAJ
description Pre-existing defects in semiconductor devices can act as nucleation sites for radiation damage. Defects generated from mismatches in lattice constant, stiffness and thermal expansion are difficult to eliminate with thermal annealing. We propose a non-thermal stimulus, the electron wind force, to reduce the pre-existing defect concentration in Zener diodes at room temperature in a minute. The pristine and pre-annealed diodes were exposed to 11 MeV Au ^3+ ions at different fluences to induce damage levels of 0.2, 2, 10 and 20 displacement per atom (dpa). Post irradiation characterization showed up to 10 times improvement in radiation tolerance in the pre-annealed devices.
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institution Kabale University
issn 1882-0786
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publishDate 2025-01-01
publisher IOP Publishing
record_format Article
series Applied Physics Express
spelling doaj-art-61fbfb9d8c814483b4601f2db34ba14e2025-01-29T04:20:16ZengIOP PublishingApplied Physics Express1882-07862025-01-0118101700110.35848/1882-0786/adab50Improving radiation tolerance with room temperature annealing of pre-existing defectsMd Hafijur Rahman0Felix Cooper1Miguel L. Crespillo2Khalid Hattar3Aman Haque4https://orcid.org/0000-0001-6535-5484Fan Ren5Stephen Pearton6https://orcid.org/0000-0001-6498-1256Douglas Wolfe7Department of Mechanical Engineering, Penn State University , University Park, PA 16802, United States of AmericaDepartment of Mechanical Engineering, Penn State University , University Park, PA 16802, United States of AmericaDepartment of Nuclear Engineering, University of Tennessee , Knoxville, TN 37996, United States of AmericaDepartment of Nuclear Engineering, University of Tennessee , Knoxville, TN 37996, United States of AmericaDepartment of Mechanical Engineering, Penn State University , University Park, PA 16802, United States of AmericaDepartment of Chemical Engineering, University of Florida , Gainesville, FL 32611, United States of AmericaDepartment of Material Science and Engineering, University of Florida , Gainesville, FL 32611, United States of AmericaDepartment of Materials Science & Engineering, Penn State University , University Park, PA 16802, United States of AmericaPre-existing defects in semiconductor devices can act as nucleation sites for radiation damage. Defects generated from mismatches in lattice constant, stiffness and thermal expansion are difficult to eliminate with thermal annealing. We propose a non-thermal stimulus, the electron wind force, to reduce the pre-existing defect concentration in Zener diodes at room temperature in a minute. The pristine and pre-annealed diodes were exposed to 11 MeV Au ^3+ ions at different fluences to induce damage levels of 0.2, 2, 10 and 20 displacement per atom (dpa). Post irradiation characterization showed up to 10 times improvement in radiation tolerance in the pre-annealed devices.https://doi.org/10.35848/1882-0786/adab50radiation tolerancezener diodeselectron wind forceheavy ion irradiation
spellingShingle Md Hafijur Rahman
Felix Cooper
Miguel L. Crespillo
Khalid Hattar
Aman Haque
Fan Ren
Stephen Pearton
Douglas Wolfe
Improving radiation tolerance with room temperature annealing of pre-existing defects
Applied Physics Express
radiation tolerance
zener diodes
electron wind force
heavy ion irradiation
title Improving radiation tolerance with room temperature annealing of pre-existing defects
title_full Improving radiation tolerance with room temperature annealing of pre-existing defects
title_fullStr Improving radiation tolerance with room temperature annealing of pre-existing defects
title_full_unstemmed Improving radiation tolerance with room temperature annealing of pre-existing defects
title_short Improving radiation tolerance with room temperature annealing of pre-existing defects
title_sort improving radiation tolerance with room temperature annealing of pre existing defects
topic radiation tolerance
zener diodes
electron wind force
heavy ion irradiation
url https://doi.org/10.35848/1882-0786/adab50
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