Some Considerations on Tunneling Losses in Field-Effect Devices for Low-Voltage Microcontrollers
The loss power density associated with the tunneling current in a typical MOS cell with a floating gate is evaluated for high electric-field strengths in the oxide layer. Furthermore, problems related to oxide thickness are discussed.
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/1998/45270 |
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