Some Considerations on Tunneling Losses in Field-Effect Devices for Low-Voltage Microcontrollers
The loss power density associated with the tunneling current in a typical MOS cell with a floating gate is evaluated for high electric-field strengths in the oxide layer. Furthermore, problems related to oxide thickness are discussed.
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Wiley
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/1998/45270 |
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| _version_ | 1832567866366361600 |
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| author | M. A. Grado-Caffaro M. Grado-Caffaro |
| author_facet | M. A. Grado-Caffaro M. Grado-Caffaro |
| author_sort | M. A. Grado-Caffaro |
| collection | DOAJ |
| description | The loss power density associated with the tunneling current in a typical MOS cell with a
floating gate is evaluated for high electric-field strengths in the oxide layer. Furthermore,
problems related to oxide thickness are discussed. |
| format | Article |
| id | doaj-art-6024b1c68148454191eff94d4c4d5383 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1998-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-6024b1c68148454191eff94d4c4d53832025-02-03T01:00:22ZengWileyActive and Passive Electronic Components0882-75161563-50311998-01-01211576010.1155/1998/45270Some Considerations on Tunneling Losses in Field-Effect Devices for Low-Voltage MicrocontrollersM. A. Grado-Caffaro0M. Grado-Caffaro1Scientific Consultants, C/Zulio Palacios, 11, Madrid 9-°B 28029, SpainScientific Consultants, C/Zulio Palacios, 11, Madrid 9-°B 28029, SpainThe loss power density associated with the tunneling current in a typical MOS cell with a floating gate is evaluated for high electric-field strengths in the oxide layer. Furthermore, problems related to oxide thickness are discussed.http://dx.doi.org/10.1155/1998/45270Loss power densitytunneling currentMOS celloxide thickness. |
| spellingShingle | M. A. Grado-Caffaro M. Grado-Caffaro Some Considerations on Tunneling Losses in Field-Effect Devices for Low-Voltage Microcontrollers Active and Passive Electronic Components Loss power density tunneling current MOS cell oxide thickness. |
| title | Some Considerations on Tunneling
Losses in Field-Effect Devices for Low-Voltage Microcontrollers |
| title_full | Some Considerations on Tunneling
Losses in Field-Effect Devices for Low-Voltage Microcontrollers |
| title_fullStr | Some Considerations on Tunneling
Losses in Field-Effect Devices for Low-Voltage Microcontrollers |
| title_full_unstemmed | Some Considerations on Tunneling
Losses in Field-Effect Devices for Low-Voltage Microcontrollers |
| title_short | Some Considerations on Tunneling
Losses in Field-Effect Devices for Low-Voltage Microcontrollers |
| title_sort | some considerations on tunneling losses in field effect devices for low voltage microcontrollers |
| topic | Loss power density tunneling current MOS cell oxide thickness. |
| url | http://dx.doi.org/10.1155/1998/45270 |
| work_keys_str_mv | AT magradocaffaro someconsiderationsontunnelinglossesinfieldeffectdevicesforlowvoltagemicrocontrollers AT mgradocaffaro someconsiderationsontunnelinglossesinfieldeffectdevicesforlowvoltagemicrocontrollers |