High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels
Highlights A high-density array of orderly silicon nanowires (SiNWs) was grown in precise locations, with diameter of D NW = 22.4 ± 2.4 nm and interwire spacing of 90 nm. A special suspension-contact protocol has been developed to reliably suspend the in-plane solid-liquid-solid SiNWs to serve as ul...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2025-02-01
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| Series: | Nano-Micro Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1007/s40820-025-01674-8 |
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| Summary: | Highlights A high-density array of orderly silicon nanowires (SiNWs) was grown in precise locations, with diameter of D NW = 22.4 ± 2.4 nm and interwire spacing of 90 nm. A special suspension-contact protocol has been developed to reliably suspend the in-plane solid-liquid-solid SiNWs to serve as ultrathin quasi-1D channels for gate-all-around field-effect transistors (GAA-FETs). By optimizing the source/drain metal contacts, high-performance catalytical GAA-FETs have been successfully demonstrated, achieving a high on/off current ratio of 107 and a steep subthreshold swing of 66 mV dec-1. |
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| ISSN: | 2311-6706 2150-5551 |