Uniformly Distributed Graphene Domain Grows on Standing Copper via Low-Pressure Chemical Vapor Deposition
Uniformly distributed graphene domains were synthesized on standing copper foil by a low-pressure chemical vapor deposition system. This method improved the distribution of the graphene domains at different positions on the same piece of copper foil along the forward direction of the gas flow. Scann...
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2013/460732 |
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| _version_ | 1832564197628575744 |
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| author | Shih-Hao Chan Sheng-Hui Chen Wei-Ting Lin Chien-Cheng Kuo |
| author_facet | Shih-Hao Chan Sheng-Hui Chen Wei-Ting Lin Chien-Cheng Kuo |
| author_sort | Shih-Hao Chan |
| collection | DOAJ |
| description | Uniformly distributed graphene domains were synthesized on standing copper foil by a low-pressure chemical vapor deposition system. This method improved the distribution of the graphene domains at different positions on the same piece of copper foil along the forward direction of the gas flow. Scanning electron microscopy (SEM) showed the average size of the graphene domains to be about ~20 m. This results show that the sheet resistance of monolayer graphene on a polyethylene terephthalate (PET) substrate is about ~359 /□ whereas that of the four-layer graphene films is about ~178 /□, with a transmittance value of 88.86% at the 550 nm wavelength. Furthermore, the sheet resistance can be reduced with the addition of HNO3 resulting in a value of 84 /□. These values meet the absolute standard for touch sensor applications, so we believe that this method can be a candidate for some transparent conductive electrode applications. |
| format | Article |
| id | doaj-art-5e3e65893c0540da8ac39d19a4e2d3c4 |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-5e3e65893c0540da8ac39d19a4e2d3c42025-02-03T01:11:33ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422013-01-01201310.1155/2013/460732460732Uniformly Distributed Graphene Domain Grows on Standing Copper via Low-Pressure Chemical Vapor DepositionShih-Hao Chan0Sheng-Hui Chen1Wei-Ting Lin2Chien-Cheng Kuo3Department of Optics and Photonics, National Central University, 300 Chung-Da Road, Chung-Li 32001, TaiwanDepartment of Optics and Photonics, National Central University, 300 Chung-Da Road, Chung-Li 32001, TaiwanDepartment of Optics and Photonics, National Central University, 300 Chung-Da Road, Chung-Li 32001, TaiwanDepartment of Optics and Photonics, National Central University, 300 Chung-Da Road, Chung-Li 32001, TaiwanUniformly distributed graphene domains were synthesized on standing copper foil by a low-pressure chemical vapor deposition system. This method improved the distribution of the graphene domains at different positions on the same piece of copper foil along the forward direction of the gas flow. Scanning electron microscopy (SEM) showed the average size of the graphene domains to be about ~20 m. This results show that the sheet resistance of monolayer graphene on a polyethylene terephthalate (PET) substrate is about ~359 /□ whereas that of the four-layer graphene films is about ~178 /□, with a transmittance value of 88.86% at the 550 nm wavelength. Furthermore, the sheet resistance can be reduced with the addition of HNO3 resulting in a value of 84 /□. These values meet the absolute standard for touch sensor applications, so we believe that this method can be a candidate for some transparent conductive electrode applications.http://dx.doi.org/10.1155/2013/460732 |
| spellingShingle | Shih-Hao Chan Sheng-Hui Chen Wei-Ting Lin Chien-Cheng Kuo Uniformly Distributed Graphene Domain Grows on Standing Copper via Low-Pressure Chemical Vapor Deposition Advances in Materials Science and Engineering |
| title | Uniformly Distributed Graphene Domain Grows on Standing Copper via Low-Pressure Chemical Vapor Deposition |
| title_full | Uniformly Distributed Graphene Domain Grows on Standing Copper via Low-Pressure Chemical Vapor Deposition |
| title_fullStr | Uniformly Distributed Graphene Domain Grows on Standing Copper via Low-Pressure Chemical Vapor Deposition |
| title_full_unstemmed | Uniformly Distributed Graphene Domain Grows on Standing Copper via Low-Pressure Chemical Vapor Deposition |
| title_short | Uniformly Distributed Graphene Domain Grows on Standing Copper via Low-Pressure Chemical Vapor Deposition |
| title_sort | uniformly distributed graphene domain grows on standing copper via low pressure chemical vapor deposition |
| url | http://dx.doi.org/10.1155/2013/460732 |
| work_keys_str_mv | AT shihhaochan uniformlydistributedgraphenedomaingrowsonstandingcoppervialowpressurechemicalvapordeposition AT shenghuichen uniformlydistributedgraphenedomaingrowsonstandingcoppervialowpressurechemicalvapordeposition AT weitinglin uniformlydistributedgraphenedomaingrowsonstandingcoppervialowpressurechemicalvapordeposition AT chienchengkuo uniformlydistributedgraphenedomaingrowsonstandingcoppervialowpressurechemicalvapordeposition |