Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect
Abstract In this study, using the Pt/Cr2O3/Pt epitaxial trilayer, we demonstrate the giant voltage modulation of the antiferromagnetic spin reversal and the voltage-induced 180° switching of the Néel vector in maintaining a permanent magnetic field. We obtained a significant modulation efficiency of...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-04-01
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| Series: | NPG Asia Materials |
| Online Access: | https://doi.org/10.1038/s41427-024-00541-z |
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| _version_ | 1832594621166780416 |
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| author | Kakeru Ujimoto Hiroki Sameshima Kentaro Toyoki Takahiro Moriyama Kohji Nakamura Yoshinori Kotani Motohiro Suzuki Ion Iino Naomi Kawamura Ryoichi Nakatani Yu Shiratsuchi |
| author_facet | Kakeru Ujimoto Hiroki Sameshima Kentaro Toyoki Takahiro Moriyama Kohji Nakamura Yoshinori Kotani Motohiro Suzuki Ion Iino Naomi Kawamura Ryoichi Nakatani Yu Shiratsuchi |
| author_sort | Kakeru Ujimoto |
| collection | DOAJ |
| description | Abstract In this study, using the Pt/Cr2O3/Pt epitaxial trilayer, we demonstrate the giant voltage modulation of the antiferromagnetic spin reversal and the voltage-induced 180° switching of the Néel vector in maintaining a permanent magnetic field. We obtained a significant modulation efficiency of the switching field, Δμ 0 H SW/ΔV (Δμ 0 H SW/ΔE), reaching a maximum of −500 mT/V (−4.80 T nm/V); this value was more than 50 times greater than that of the ferromagnetic-based counterparts. From the temperature dependence of the modulation efficiency, X-ray magnetic circular dichroism measurements and first-principles calculations, we showed that the origin of the giant modulation efficiency relied on the electric field modulation of the net magnetization due to the magnetoelectric effect. From the first-principles calculation and the thickness effect on the offset electric field, we found that the interfacial magnetoelectric effect emerged. Our demonstration reveals the energy-efficient and widely applicable operation of an antiferromagnetic spin based on a mechanism distinct from magnetic anisotropy control. |
| format | Article |
| id | doaj-art-5d47aca495914b0c9ef362d5f1d7de5c |
| institution | Kabale University |
| issn | 1884-4057 |
| language | English |
| publishDate | 2024-04-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | NPG Asia Materials |
| spelling | doaj-art-5d47aca495914b0c9ef362d5f1d7de5c2025-01-19T12:28:29ZengNature PortfolioNPG Asia Materials1884-40572024-04-0116111110.1038/s41427-024-00541-zGiant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effectKakeru Ujimoto0Hiroki Sameshima1Kentaro Toyoki2Takahiro Moriyama3Kohji Nakamura4Yoshinori Kotani5Motohiro Suzuki6Ion Iino7Naomi Kawamura8Ryoichi Nakatani9Yu Shiratsuchi10Department of Materials Science and Engineering, Osaka UniversityDepartment of Materials Science and Engineering, Osaka UniversityDepartment of Materials Science and Engineering, Osaka UniversityDepartment of Materials Physics, Nagoya UniversityDepartment of Physics Engineering, Mie UniversityJapan Synchrotron Radiation Research Institute (JASRI/SPring-8)School of Engineering, Kwansei Gakuin UniversityDepartment of Materials Science and Engineering, Osaka UniversityJapan Synchrotron Radiation Research Institute (JASRI/SPring-8)Department of Materials Science and Engineering, Osaka UniversityDepartment of Materials Science and Engineering, Osaka UniversityAbstract In this study, using the Pt/Cr2O3/Pt epitaxial trilayer, we demonstrate the giant voltage modulation of the antiferromagnetic spin reversal and the voltage-induced 180° switching of the Néel vector in maintaining a permanent magnetic field. We obtained a significant modulation efficiency of the switching field, Δμ 0 H SW/ΔV (Δμ 0 H SW/ΔE), reaching a maximum of −500 mT/V (−4.80 T nm/V); this value was more than 50 times greater than that of the ferromagnetic-based counterparts. From the temperature dependence of the modulation efficiency, X-ray magnetic circular dichroism measurements and first-principles calculations, we showed that the origin of the giant modulation efficiency relied on the electric field modulation of the net magnetization due to the magnetoelectric effect. From the first-principles calculation and the thickness effect on the offset electric field, we found that the interfacial magnetoelectric effect emerged. Our demonstration reveals the energy-efficient and widely applicable operation of an antiferromagnetic spin based on a mechanism distinct from magnetic anisotropy control.https://doi.org/10.1038/s41427-024-00541-z |
| spellingShingle | Kakeru Ujimoto Hiroki Sameshima Kentaro Toyoki Takahiro Moriyama Kohji Nakamura Yoshinori Kotani Motohiro Suzuki Ion Iino Naomi Kawamura Ryoichi Nakatani Yu Shiratsuchi Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect NPG Asia Materials |
| title | Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect |
| title_full | Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect |
| title_fullStr | Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect |
| title_full_unstemmed | Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect |
| title_short | Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect |
| title_sort | giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect |
| url | https://doi.org/10.1038/s41427-024-00541-z |
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