Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect
Abstract In this study, using the Pt/Cr2O3/Pt epitaxial trilayer, we demonstrate the giant voltage modulation of the antiferromagnetic spin reversal and the voltage-induced 180° switching of the Néel vector in maintaining a permanent magnetic field. We obtained a significant modulation efficiency of...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-04-01
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| Series: | NPG Asia Materials |
| Online Access: | https://doi.org/10.1038/s41427-024-00541-z |
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| Summary: | Abstract In this study, using the Pt/Cr2O3/Pt epitaxial trilayer, we demonstrate the giant voltage modulation of the antiferromagnetic spin reversal and the voltage-induced 180° switching of the Néel vector in maintaining a permanent magnetic field. We obtained a significant modulation efficiency of the switching field, Δμ 0 H SW/ΔV (Δμ 0 H SW/ΔE), reaching a maximum of −500 mT/V (−4.80 T nm/V); this value was more than 50 times greater than that of the ferromagnetic-based counterparts. From the temperature dependence of the modulation efficiency, X-ray magnetic circular dichroism measurements and first-principles calculations, we showed that the origin of the giant modulation efficiency relied on the electric field modulation of the net magnetization due to the magnetoelectric effect. From the first-principles calculation and the thickness effect on the offset electric field, we found that the interfacial magnetoelectric effect emerged. Our demonstration reveals the energy-efficient and widely applicable operation of an antiferromagnetic spin based on a mechanism distinct from magnetic anisotropy control. |
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| ISSN: | 1884-4057 |