The Effect of Microcrack Length in Silicon Cells on the Potential Induced Degradation Behavior

The presence of microcracks may lead to loss in the module output power and safety hazard of the module. This paper investigated whether the existed microscopic microcracks in cells will facilitate the PID behavior. Cells with different degrees of microcracks were fabricated into small modules to un...

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Main Authors: Xianfang Gou, Xiaoyan Li, Shaoliang Wang, Hao Zhuang, Xixi Huang, Likai Jiang
Format: Article
Language:English
Published: Wiley 2018-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2018/4381579
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author Xianfang Gou
Xiaoyan Li
Shaoliang Wang
Hao Zhuang
Xixi Huang
Likai Jiang
author_facet Xianfang Gou
Xiaoyan Li
Shaoliang Wang
Hao Zhuang
Xixi Huang
Likai Jiang
author_sort Xianfang Gou
collection DOAJ
description The presence of microcracks may lead to loss in the module output power and safety hazard of the module. This paper investigated whether the existed microscopic microcracks in cells will facilitate the PID behavior. Cells with different degrees of microcracks were fabricated into small modules to undergo the simulated PID test. The I-V performance and EL images of the modules were characterized before and after the PID test. The obtained results demonstrate that with the increase in the microcracked area or length, the modules would show a more serious PID behavior. The mechanism of this microcrack length-related degradation under high negative bias was proposed.
format Article
id doaj-art-5d03eab8eed042abaa6c4656b9949fa1
institution Kabale University
issn 1110-662X
1687-529X
language English
publishDate 2018-01-01
publisher Wiley
record_format Article
series International Journal of Photoenergy
spelling doaj-art-5d03eab8eed042abaa6c4656b9949fa12025-02-03T06:07:02ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2018-01-01201810.1155/2018/43815794381579The Effect of Microcrack Length in Silicon Cells on the Potential Induced Degradation BehaviorXianfang Gou0Xiaoyan Li1Shaoliang Wang2Hao Zhuang3Xixi Huang4Likai Jiang5Beijing University of Technology, Beijing 100124, ChinaBeijing University of Technology, Beijing 100124, ChinaBeijing Jiaotong University, Beijing 100044, ChinaCECEP Solar Energy Technology (Zhenjiang) Co., Ltd., Zhenjiang 212132, ChinaCECEP Solar Energy Technology (Zhenjiang) Co., Ltd., Zhenjiang 212132, ChinaCECEP Solar Energy Technology (Zhenjiang) Co., Ltd., Zhenjiang 212132, ChinaThe presence of microcracks may lead to loss in the module output power and safety hazard of the module. This paper investigated whether the existed microscopic microcracks in cells will facilitate the PID behavior. Cells with different degrees of microcracks were fabricated into small modules to undergo the simulated PID test. The I-V performance and EL images of the modules were characterized before and after the PID test. The obtained results demonstrate that with the increase in the microcracked area or length, the modules would show a more serious PID behavior. The mechanism of this microcrack length-related degradation under high negative bias was proposed.http://dx.doi.org/10.1155/2018/4381579
spellingShingle Xianfang Gou
Xiaoyan Li
Shaoliang Wang
Hao Zhuang
Xixi Huang
Likai Jiang
The Effect of Microcrack Length in Silicon Cells on the Potential Induced Degradation Behavior
International Journal of Photoenergy
title The Effect of Microcrack Length in Silicon Cells on the Potential Induced Degradation Behavior
title_full The Effect of Microcrack Length in Silicon Cells on the Potential Induced Degradation Behavior
title_fullStr The Effect of Microcrack Length in Silicon Cells on the Potential Induced Degradation Behavior
title_full_unstemmed The Effect of Microcrack Length in Silicon Cells on the Potential Induced Degradation Behavior
title_short The Effect of Microcrack Length in Silicon Cells on the Potential Induced Degradation Behavior
title_sort effect of microcrack length in silicon cells on the potential induced degradation behavior
url http://dx.doi.org/10.1155/2018/4381579
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