Extraction of individual Pockels coefficients of thin films via interferometric reflection measurements

Ferroelectric thin films integrated on passive photonic platforms offer ways to achieve functionalities that are otherwise impossible or inefficient, such as electro-optic (EO) modulation, acousto-optic modulation or optical nonlinear conversion. Characterization methods of the EO properties of thin...

Full description

Saved in:
Bibliographic Details
Main Authors: Kobe De Geest, Enes Lievens, Ewout Picavet, Klaartje De Buysser, Dries Van Thourhout, Jeroen Beeckman
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:JPhys Photonics
Subjects:
Online Access:https://doi.org/10.1088/2515-7647/ada902
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ferroelectric thin films integrated on passive photonic platforms offer ways to achieve functionalities that are otherwise impossible or inefficient, such as electro-optic (EO) modulation, acousto-optic modulation or optical nonlinear conversion. Characterization methods of the EO properties of thin films are often only able to extract an effective EO response, while in many integrated photonic circuits it is one of the Pockels coefficients that determines the strength of the modulation. In this work, we demonstrate a new method to extract the r _33 and the r _13 coefficient independently by measuring the change in polarization and amplitude of light reflected at the sample, taking into account multiple reflections and interference effects. This method is verified for highly textured Pb(Zr,Ti)O _3 and BaTiO _3 thin films.
ISSN:2515-7647