Modeling and Experimental Validation of the Intrinsic SNR in Spin Qubit Gate-Based Readout and Its Impacts on Readout Electronics
In semiconductor spin quantum bits (qubits), the radio-frequency (RF) gate-based readout is a promising solution for future large-scale integration, as it allows for a fast, frequency-multiplexed readout architecture, enabling multiple qubits to be read out simultaneously. This article introduces a...
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IEEE
2024-01-01
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| Series: | IEEE Transactions on Quantum Engineering |
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| Online Access: | https://ieeexplore.ieee.org/document/10493854/ |
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| author | Bagas Prabowo Jurgen Dijkema Xiao Xue Fabio Sebastiano Lieven M. K. Vandersypen Masoud Babaie |
| author_facet | Bagas Prabowo Jurgen Dijkema Xiao Xue Fabio Sebastiano Lieven M. K. Vandersypen Masoud Babaie |
| author_sort | Bagas Prabowo |
| collection | DOAJ |
| description | In semiconductor spin quantum bits (qubits), the radio-frequency (RF) gate-based readout is a promising solution for future large-scale integration, as it allows for a fast, frequency-multiplexed readout architecture, enabling multiple qubits to be read out simultaneously. This article introduces a theoretical framework to evaluate the effect of various parameters, such as the readout probe power, readout chain's noise performance, and integration time on the intrinsic readout signal-to-noise ratio, and thus readout fidelity of RF gate-based readout systems. By analyzing the underlying physics of spin qubits during readout, this work proposes a qubit readout model that takes into account the qubit's quantum mechanical properties, providing a way to evaluate the tradeoffs among the aforementioned parameters. The validity of the proposed model is evaluated by comparing the simulation and experimental results. The proposed analytical approach, the developed model, and the experimental results enable designers to optimize the entire readout chain effectively, thus leading to a faster, lower power readout system with integrated cryogenic electronics. |
| format | Article |
| id | doaj-art-5a3e1b80b7bf40fc9a53fee9fcf8d061 |
| institution | Kabale University |
| issn | 2689-1808 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Transactions on Quantum Engineering |
| spelling | doaj-art-5a3e1b80b7bf40fc9a53fee9fcf8d0612025-01-25T00:03:30ZengIEEEIEEE Transactions on Quantum Engineering2689-18082024-01-01511510.1109/TQE.2024.338567310493854Modeling and Experimental Validation of the Intrinsic SNR in Spin Qubit Gate-Based Readout and Its Impacts on Readout ElectronicsBagas Prabowo0https://orcid.org/0009-0005-6118-2164Jurgen Dijkema1https://orcid.org/0000-0002-9756-2952Xiao Xue2https://orcid.org/0000-0003-1204-9883Fabio Sebastiano3https://orcid.org/0000-0002-8489-9409Lieven M. K. Vandersypen4https://orcid.org/0000-0003-4346-7877Masoud Babaie5https://orcid.org/0000-0001-7635-5324Department of Quantum and Computer Engineering, Delft University of Technology, Delft, The NetherlandsQuTech, Delft University of Technology, Delft, The NetherlandsQuTech, Delft University of Technology, Delft, The NetherlandsDepartment of Quantum and Computer Engineering, Delft University of Technology, Delft, The NetherlandsQuTech, Delft University of Technology, Delft, The NetherlandsQuTech, Delft University of Technology, Delft, The NetherlandsIn semiconductor spin quantum bits (qubits), the radio-frequency (RF) gate-based readout is a promising solution for future large-scale integration, as it allows for a fast, frequency-multiplexed readout architecture, enabling multiple qubits to be read out simultaneously. This article introduces a theoretical framework to evaluate the effect of various parameters, such as the readout probe power, readout chain's noise performance, and integration time on the intrinsic readout signal-to-noise ratio, and thus readout fidelity of RF gate-based readout systems. By analyzing the underlying physics of spin qubits during readout, this work proposes a qubit readout model that takes into account the qubit's quantum mechanical properties, providing a way to evaluate the tradeoffs among the aforementioned parameters. The validity of the proposed model is evaluated by comparing the simulation and experimental results. The proposed analytical approach, the developed model, and the experimental results enable designers to optimize the entire readout chain effectively, thus leading to a faster, lower power readout system with integrated cryogenic electronics.https://ieeexplore.ieee.org/document/10493854/Cryo-CMOScryogenicdouble quantum dot (DQD)electronicsnoise temperaturequantum capacitance |
| spellingShingle | Bagas Prabowo Jurgen Dijkema Xiao Xue Fabio Sebastiano Lieven M. K. Vandersypen Masoud Babaie Modeling and Experimental Validation of the Intrinsic SNR in Spin Qubit Gate-Based Readout and Its Impacts on Readout Electronics IEEE Transactions on Quantum Engineering Cryo-CMOS cryogenic double quantum dot (DQD) electronics noise temperature quantum capacitance |
| title | Modeling and Experimental Validation of the Intrinsic SNR in Spin Qubit Gate-Based Readout and Its Impacts on Readout Electronics |
| title_full | Modeling and Experimental Validation of the Intrinsic SNR in Spin Qubit Gate-Based Readout and Its Impacts on Readout Electronics |
| title_fullStr | Modeling and Experimental Validation of the Intrinsic SNR in Spin Qubit Gate-Based Readout and Its Impacts on Readout Electronics |
| title_full_unstemmed | Modeling and Experimental Validation of the Intrinsic SNR in Spin Qubit Gate-Based Readout and Its Impacts on Readout Electronics |
| title_short | Modeling and Experimental Validation of the Intrinsic SNR in Spin Qubit Gate-Based Readout and Its Impacts on Readout Electronics |
| title_sort | modeling and experimental validation of the intrinsic snr in spin qubit gate based readout and its impacts on readout electronics |
| topic | Cryo-CMOS cryogenic double quantum dot (DQD) electronics noise temperature quantum capacitance |
| url | https://ieeexplore.ieee.org/document/10493854/ |
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