Light-Output Enhancement of GaN-Based Light-Emitting Diodes with Three-Dimensional Backside Reflectors Patterned by Microscale Cone Array
Three-dimensional (3D) backside reflector, compared with flat reflectors, can improve the probability of finding the escape cone for reflecting lights and thus enhance the light-extraction efficiency (LEE) for GaN-based light-emitting diode (LED) chips. A triangle-lattice of microscale SiO2 cone arr...
Saved in:
Main Authors: | Huamao Huang, Jinyong Hu, Hong Wang |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley
2014-01-01
|
Series: | The Scientific World Journal |
Online Access: | http://dx.doi.org/10.1155/2014/837586 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Tunneling assisted p-contact free GaN-InGaN green light-emitting diodes
by: Jamshad Bashir, et al.
Published: (2025-01-01) -
Performance Study of Ultraviolet AlGaN/GaN Light-Emitting Diodes Based on Superlattice Tunneling Junction
by: Zhuang Zhao, et al.
Published: (2024-12-01) -
Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes
by: Manh-Ha Doan, et al.
Published: (2014-01-01) -
Thermal Characteristics of InGaN/GaN Flip-Chip Light Emitting Diodes with Diamond-Like Carbon Heat-Spreading Layers
by: Pai-Yang Tsai, et al.
Published: (2014-01-01) -
Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes
by: Hsu-Hung Hsueh, et al.
Published: (2014-01-01)