Output Characteristics of a GaAs Photoconductive Semiconductor Switch With Comb Electrodes
GaAs photoconductive semiconductor switches (PCSSs) with comb electrodes were fabricated on semi-insulating GaAs. A pulsed 1064-nm laser with a 700-ps (FWHM) pulse width and optical energy of <inline-formula> <tex-math notation="LaTeX">$134 \; \mu $ </tex-math></inline...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10752635/ |
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| Summary: | GaAs photoconductive semiconductor switches (PCSSs) with comb electrodes were fabricated on semi-insulating GaAs. A pulsed 1064-nm laser with a 700-ps (FWHM) pulse width and optical energy of <inline-formula> <tex-math notation="LaTeX">$134 \; \mu $ </tex-math></inline-formula>J was used to trigger 2-mm-gap PCSSs with comb lengths ranging from 0 to <inline-formula> <tex-math notation="LaTeX">$750 \; \mu $ </tex-math></inline-formula>m. The effect of the comb electrodes on the output characteristics was investigated by comparing the performance parameters of sample devices with different comb lengths. Devices with a longer comb exhibited higher peak output voltage and better immunity against surface flashover. A PCSS specimen with a 750-<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m comb exhibited a higher peak output voltage by 3.53 times compared to a PCSS without a comb at bias voltages lower than 1 kV. Moreover, the PCSS with the 750-<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m comb electrode successfully generated a pulse with a peak voltage of 1.34 kV, while the peak voltage generated by a PCSS without a comb was limited to 0.74 kV. |
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| ISSN: | 2169-3536 |