Large Active Area, Low Capacitance Multi-Dot PIN Photodiode in 0.35 m CMOS Technology<inline-formula><tex-math notation="LaTeX"/></inline-formula>

Large Active Area, Low Capacitance Multi-Dot PIN Photodiode in 0.35 m CMOS Technology<inline-formula><tex-math notation="LaTeX"/></inline-formula>

This article presents a multi-dot PIN photodiode structure that addresses the inherent trade-off between the light-sensitive area and capacitance in conventional planar photodiodes commonly used in optical communication systems. This structure is a combination of several connected cathode dots and w...

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Bibliographic Details
Main Authors: S. S. Kohneh Poushi, B. Goll, K. Schneider-Hornstein, Horst Zimmermann
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Photonics Journal
Subjects:
CMOS
multi-dots photodiodes
light-sensitive area
low capacitance
PIN photodiodes
peripheral charge collection
Online Access:https://ieeexplore.ieee.org/document/10336890/
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