Annealing Study on Praseodymium-Doped Indium Zinc Oxide Thin-Film Transistors and Fabrication of Flexible Devices

Annealing Study on Praseodymium-Doped Indium Zinc Oxide Thin-Film Transistors and Fabrication of Flexible Devices

The praseodymium-doped indium zinc oxide (PrIZO) thin-film transistor (TFT) is promising for applications in flat-panel displays, due to its high carrier mobility and stability. Nevertheless, there are few studies on the mechanism of annealing on PrIZO films and the fabrication of flexible devices....

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Bibliographic Details
Main Authors: Zhenyu Wu, Honglong Ning, Han Li, Xiaoqin Wei, Dongxiang Luo, Dong Yuan, Zhihao Liang, Guoping Su, Rihui Yao, Junbiao Peng
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Micromachines
Subjects:
praseodymium-doped
indium zinc oxide
annealing temperature
flexible
thin-film transistor
Online Access:https://www.mdpi.com/2072-666X/16/1/17
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