Annealing Study on Praseodymium-Doped Indium Zinc Oxide Thin-Film Transistors and Fabrication of Flexible Devices
The praseodymium-doped indium zinc oxide (PrIZO) thin-film transistor (TFT) is promising for applications in flat-panel displays, due to its high carrier mobility and stability. Nevertheless, there are few studies on the mechanism of annealing on PrIZO films and the fabrication of flexible devices....
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2024-12-01
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| author | Zhenyu Wu Honglong Ning Han Li Xiaoqin Wei Dongxiang Luo Dong Yuan Zhihao Liang Guoping Su Rihui Yao Junbiao Peng |
| author_facet | Zhenyu Wu Honglong Ning Han Li Xiaoqin Wei Dongxiang Luo Dong Yuan Zhihao Liang Guoping Su Rihui Yao Junbiao Peng |
| author_sort | Zhenyu Wu |
| collection | DOAJ |
| description | The praseodymium-doped indium zinc oxide (PrIZO) thin-film transistor (TFT) is promising for applications in flat-panel displays, due to its high carrier mobility and stability. Nevertheless, there are few studies on the mechanism of annealing on PrIZO films and the fabrication of flexible devices. In this work, we first optimized the annealing-process parameters on the glass substrate. As the annealing temperature rises, the film tends to be denser and obtains a lower surface roughness, a narrower optical-band gap and less oxygen-vacancy content. However, the μ-PCD test shows the 250 °C-annealed film obtains the least defects. And the PrIZO TFT annealed at 250 °C exhibited a desired performance with a saturation mobility (μ<sub>sat</sub>) of 14.26 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>, a subthreshold swing (SS) of 0.14 V·dec<sup>−1</sup>, an interface trap density (D<sub>it</sub>) of 3.17 × 10<sup>11</sup>, an I<sub>on</sub>/I<sub>off</sub> ratio of 1.83 × 10<sup>8</sup> and a threshold voltage (Vth) of −1.15 V. The flexible devices were prepared using the optimized parameters on the Polyimide (PI) substrate and subjected to static bending tests. After bending at a radius of 5 mm, the mobility of devices decreases slightly from 12.48 to 10.87 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>, demonstrating the great potential of PrIZO for flexible displays. |
| format | Article |
| id | doaj-art-58319f8fc2174ea7adb0f63a5db631b7 |
| institution | Kabale University |
| issn | 2072-666X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-58319f8fc2174ea7adb0f63a5db631b72025-01-24T13:41:51ZengMDPI AGMicromachines2072-666X2024-12-011611710.3390/mi16010017Annealing Study on Praseodymium-Doped Indium Zinc Oxide Thin-Film Transistors and Fabrication of Flexible DevicesZhenyu Wu0Honglong Ning1Han Li2Xiaoqin Wei3Dongxiang Luo4Dong Yuan5Zhihao Liang6Guoping Su7Rihui Yao8Junbiao Peng9Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, ChinaGuangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, ChinaSouthwest Institute of Technology and Engineering, Chongqing 400039, ChinaSouthwest Institute of Technology and Engineering, Chongqing 400039, ChinaHuangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, ChinaGuangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, ChinaGuangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, ChinaGuangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, ChinaGuangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, ChinaGuangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, ChinaThe praseodymium-doped indium zinc oxide (PrIZO) thin-film transistor (TFT) is promising for applications in flat-panel displays, due to its high carrier mobility and stability. Nevertheless, there are few studies on the mechanism of annealing on PrIZO films and the fabrication of flexible devices. In this work, we first optimized the annealing-process parameters on the glass substrate. As the annealing temperature rises, the film tends to be denser and obtains a lower surface roughness, a narrower optical-band gap and less oxygen-vacancy content. However, the μ-PCD test shows the 250 °C-annealed film obtains the least defects. And the PrIZO TFT annealed at 250 °C exhibited a desired performance with a saturation mobility (μ<sub>sat</sub>) of 14.26 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>, a subthreshold swing (SS) of 0.14 V·dec<sup>−1</sup>, an interface trap density (D<sub>it</sub>) of 3.17 × 10<sup>11</sup>, an I<sub>on</sub>/I<sub>off</sub> ratio of 1.83 × 10<sup>8</sup> and a threshold voltage (Vth) of −1.15 V. The flexible devices were prepared using the optimized parameters on the Polyimide (PI) substrate and subjected to static bending tests. After bending at a radius of 5 mm, the mobility of devices decreases slightly from 12.48 to 10.87 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>, demonstrating the great potential of PrIZO for flexible displays.https://www.mdpi.com/2072-666X/16/1/17praseodymium-dopedindium zinc oxideannealing temperatureflexiblethin-film transistor |
| spellingShingle | Zhenyu Wu Honglong Ning Han Li Xiaoqin Wei Dongxiang Luo Dong Yuan Zhihao Liang Guoping Su Rihui Yao Junbiao Peng Annealing Study on Praseodymium-Doped Indium Zinc Oxide Thin-Film Transistors and Fabrication of Flexible Devices Micromachines praseodymium-doped indium zinc oxide annealing temperature flexible thin-film transistor |
| title | Annealing Study on Praseodymium-Doped Indium Zinc Oxide Thin-Film Transistors and Fabrication of Flexible Devices |
| title_full | Annealing Study on Praseodymium-Doped Indium Zinc Oxide Thin-Film Transistors and Fabrication of Flexible Devices |
| title_fullStr | Annealing Study on Praseodymium-Doped Indium Zinc Oxide Thin-Film Transistors and Fabrication of Flexible Devices |
| title_full_unstemmed | Annealing Study on Praseodymium-Doped Indium Zinc Oxide Thin-Film Transistors and Fabrication of Flexible Devices |
| title_short | Annealing Study on Praseodymium-Doped Indium Zinc Oxide Thin-Film Transistors and Fabrication of Flexible Devices |
| title_sort | annealing study on praseodymium doped indium zinc oxide thin film transistors and fabrication of flexible devices |
| topic | praseodymium-doped indium zinc oxide annealing temperature flexible thin-film transistor |
| url | https://www.mdpi.com/2072-666X/16/1/17 |
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