An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices
In this letter, an accurate method for extracting the critical field Ec in short channel MOSFET's is presented. The principle of this method is based on the comparison between two models which give drain saturation voltage evolution against gate voltage Vdsat(Vg) continuously. The results obtai...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2001-01-01
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| Series: | Active and Passive Electronic Components |
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| Online Access: | http://dx.doi.org/10.1155/2001/49537 |
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| _version_ | 1832560033512030208 |
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| author | Y. Amhouche A. El Abbassi K. Raïs R. Rmaily |
| author_facet | Y. Amhouche A. El Abbassi K. Raïs R. Rmaily |
| author_sort | Y. Amhouche |
| collection | DOAJ |
| description | In this letter, an accurate method for extracting the critical field Ec in short channel
MOSFET's is presented. The principle of this method is based on the comparison
between two models which give drain saturation voltage evolution against gate
voltage Vdsat(Vg) continuously. The results obtained by this technique have shown
better agreement with measurements data and have allow in the same time to
determine the validity domain of Sodini's law [1]. |
| format | Article |
| id | doaj-art-57fc0a42739b4364b78182b851e3da11 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2001-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-57fc0a42739b4364b78182b851e3da112025-02-03T01:28:35ZengWileyActive and Passive Electronic Components0882-75161563-50312001-01-0124313514010.1155/2001/49537An Accurate Method for Extracting the Critical Field in Short Channel NMOS DevicesY. Amhouche0A. El Abbassi1K. Raïs2R. Rmaily3Laboratoire de Caractérisation des Composants à Semi-conducteurs, Université Chouaib, Doukkali B.P. 20, EL Jadida, MoroccoLaboratoire de Caractérisation des Composants à Semi-conducteurs, Université Chouaib, Doukkali B.P. 20, EL Jadida, MoroccoLaboratoire de Caractérisation des Composants à Semi-conducteurs, Université Chouaib, Doukkali B.P. 20, EL Jadida, MoroccoLaboratoire de Caractérisation des Composants à Semi-conducteurs, Université Chouaib, Doukkali B.P. 20, EL Jadida, MoroccoIn this letter, an accurate method for extracting the critical field Ec in short channel MOSFET's is presented. The principle of this method is based on the comparison between two models which give drain saturation voltage evolution against gate voltage Vdsat(Vg) continuously. The results obtained by this technique have shown better agreement with measurements data and have allow in the same time to determine the validity domain of Sodini's law [1].http://dx.doi.org/10.1155/2001/49537Drain saturation voltageCritical fieldSubstrate currentEffective mobilitySaturation velocity. |
| spellingShingle | Y. Amhouche A. El Abbassi K. Raïs R. Rmaily An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices Active and Passive Electronic Components Drain saturation voltage Critical field Substrate current Effective mobility Saturation velocity. |
| title | An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices |
| title_full | An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices |
| title_fullStr | An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices |
| title_full_unstemmed | An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices |
| title_short | An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices |
| title_sort | accurate method for extracting the critical field in short channel nmos devices |
| topic | Drain saturation voltage Critical field Substrate current Effective mobility Saturation velocity. |
| url | http://dx.doi.org/10.1155/2001/49537 |
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