An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices
In this letter, an accurate method for extracting the critical field Ec in short channel MOSFET's is presented. The principle of this method is based on the comparison between two models which give drain saturation voltage evolution against gate voltage Vdsat(Vg) continuously. The results obtai...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2001-01-01
|
| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/2001/49537 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | In this letter, an accurate method for extracting the critical field Ec in short channel
MOSFET's is presented. The principle of this method is based on the comparison
between two models which give drain saturation voltage evolution against gate
voltage Vdsat(Vg) continuously. The results obtained by this technique have shown
better agreement with measurements data and have allow in the same time to
determine the validity domain of Sodini's law [1]. |
|---|---|
| ISSN: | 0882-7516 1563-5031 |