DEPTH MEASUREMENT OF DISRUPTED LAYER ON SILICON WAFER SURFACE USING AUGER SPECTROSCOPY METHOD

DEPTH MEASUREMENT OF DISRUPTED LAYER ON SILICON WAFER SURFACE USING AUGER SPECTROSCOPY METHOD

The paper proposes a method for depth measurement of a disrupted layer on silicon wafer surface which is based on application of Auger spectroscopy with the precision sputtering of surface silicon layers and registration of the Auger electron yield intensity. In order to measure the disrupted layer...

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Bibliographic Details
Main Authors: V. A. Solodukha, A. I. Belous, G. G. Chyhir
Format: Article
Language:Russian
Published: Belarusian National Technical University 2016-08-01
Series:Наука и техника
Subjects:
silicon wafer
disrupted layer
auger electron
depth of disruption
Online Access:https://sat.bntu.by/jour/article/view/938
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