Characterization of WO3 Thin Films Grown on Silicon by HFMOD
We studied the effect of annealing temperature on the physical properties of WO3 thin films using different experimental techniques. WO3 has been prepared by hot-filament metal oxide deposition (HFMOD). The films, chemical stoichiometry was determined by X-ray photoelectron spectroscopy (XPS). The m...
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Wiley
2013-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2013/591787 |
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| author | Joel Díaz-Reyes Roberto Castillo-Ojeda Miguel Galván-Arellano Orlando Zaca-Moran |
| author_facet | Joel Díaz-Reyes Roberto Castillo-Ojeda Miguel Galván-Arellano Orlando Zaca-Moran |
| author_sort | Joel Díaz-Reyes |
| collection | DOAJ |
| description | We studied the effect of annealing temperature on the physical properties of WO3 thin films using different experimental techniques. WO3 has been prepared by hot-filament metal oxide deposition (HFMOD). The films, chemical stoichiometry was determined by X-ray photoelectron spectroscopy (XPS). The monoclinic single-phase nature of the as-deposited films, structure was changed to triclinic structure by annealing them at higher temperatures than 400°C, which has been determined by the X-ray diffraction analysis. By Raman scattering is confirmed the change of crystalline phase, of monoclinic to triclinic, since that lattice vibrational
modes of as-deposited WO3 and annealed at 500°C present clearly differences. WO3 band gap energy can be varied from 2.92 to 3.15 eV by annealing WO3 from 0 to 500°C as was obtained by transmittance measurements. The photoluminescence response of the as-deposited film presents three radiative transitions observed at 2.85, 2.41, and 2.04 eV that could be associated with oxygen vacancies; the first one is shifted to higher energies as the annealing temperature is increased due to the change of crystalline phase of the WO3. |
| format | Article |
| id | doaj-art-57b4878bbd2a46558cf496aa60377e07 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
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| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-57b4878bbd2a46558cf496aa60377e072025-02-03T01:22:29ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242013-01-01201310.1155/2013/591787591787Characterization of WO3 Thin Films Grown on Silicon by HFMODJoel Díaz-Reyes0Roberto Castillo-Ojeda1Miguel Galván-Arellano2Orlando Zaca-Moran3Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Ex-Hacienda de San Juan Molino, 90700 Tepetitla, TLAX, MexicoUniversidad Politécnica de Pachuca, Rancho Luna, Ex-Hacienda de Santa Bárbara, 43830 Zempoala, HGO, MexicoDepartmento de Ingeniería Eléctrica, SEES, CINVESTAV-IPN. A. P. 14-740, 07000 México, DF, MexicoCentro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Ex-Hacienda de San Juan Molino, 90700 Tepetitla, TLAX, MexicoWe studied the effect of annealing temperature on the physical properties of WO3 thin films using different experimental techniques. WO3 has been prepared by hot-filament metal oxide deposition (HFMOD). The films, chemical stoichiometry was determined by X-ray photoelectron spectroscopy (XPS). The monoclinic single-phase nature of the as-deposited films, structure was changed to triclinic structure by annealing them at higher temperatures than 400°C, which has been determined by the X-ray diffraction analysis. By Raman scattering is confirmed the change of crystalline phase, of monoclinic to triclinic, since that lattice vibrational modes of as-deposited WO3 and annealed at 500°C present clearly differences. WO3 band gap energy can be varied from 2.92 to 3.15 eV by annealing WO3 from 0 to 500°C as was obtained by transmittance measurements. The photoluminescence response of the as-deposited film presents three radiative transitions observed at 2.85, 2.41, and 2.04 eV that could be associated with oxygen vacancies; the first one is shifted to higher energies as the annealing temperature is increased due to the change of crystalline phase of the WO3.http://dx.doi.org/10.1155/2013/591787 |
| spellingShingle | Joel Díaz-Reyes Roberto Castillo-Ojeda Miguel Galván-Arellano Orlando Zaca-Moran Characterization of WO3 Thin Films Grown on Silicon by HFMOD Advances in Condensed Matter Physics |
| title | Characterization of WO3 Thin Films Grown on Silicon by HFMOD |
| title_full | Characterization of WO3 Thin Films Grown on Silicon by HFMOD |
| title_fullStr | Characterization of WO3 Thin Films Grown on Silicon by HFMOD |
| title_full_unstemmed | Characterization of WO3 Thin Films Grown on Silicon by HFMOD |
| title_short | Characterization of WO3 Thin Films Grown on Silicon by HFMOD |
| title_sort | characterization of wo3 thin films grown on silicon by hfmod |
| url | http://dx.doi.org/10.1155/2013/591787 |
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