Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells
The amorphous silicon/amorphous silicon (a-Si/a-Si) tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanc...
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| Format: | Article |
| Language: | English |
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Wiley
2011-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2011/264709 |
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| author | Yang-Shin Lin Shui-Yang Lien Chao-Chun Wang Chia-Hsun Hsu Chih-Hsiang Yang Asheesh Nautiyal Dong-Sing Wuu Pi-Chuen Tsai Shuo-Jen Lee |
| author_facet | Yang-Shin Lin Shui-Yang Lien Chao-Chun Wang Chia-Hsun Hsu Chih-Hsiang Yang Asheesh Nautiyal Dong-Sing Wuu Pi-Chuen Tsai Shuo-Jen Lee |
| author_sort | Yang-Shin Lin |
| collection | DOAJ |
| description | The amorphous silicon/amorphous silicon (a-Si/a-Si) tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD) at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p+ recombination layer and i2/i1 thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (Voc) of 1.59 V, short-circuit current density (Jsc) of 7.96 mA/cm2, and a fill factor (FF) of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p+ recombination layer shows the excellent stability and the stabilized efficiency of 8.7%. |
| format | Article |
| id | doaj-art-57a08056c2e24b64b2ffd96c5e6b7b14 |
| institution | OA Journals |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-57a08056c2e24b64b2ffd96c5e6b7b142025-08-20T02:05:46ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2011-01-01201110.1155/2011/264709264709Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar CellsYang-Shin Lin0Shui-Yang Lien1Chao-Chun Wang2Chia-Hsun Hsu3Chih-Hsiang Yang4Asheesh Nautiyal5Dong-Sing Wuu6Pi-Chuen Tsai7Shuo-Jen Lee8Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, TaiwanDepartment of Materials Science and Engineering, MingDao University, ChungHua 52345, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung 402, TaiwanGraduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, TaiwanDepartment of Materials Science and Engineering, MingDao University, ChungHua 52345, TaiwanDepartment of Mechanical Engineering, Yuan Ze University, 135 Yuan-Tung Road, Chungli, 320 Taoyuan, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung 402, TaiwanGraduate Institute of Materials Science and Green Energy Engineering, National Formosa University, Huwei, Yunlin 632, TaiwanDepartment of Mechanical Engineering, Yuan Ze University, 135 Yuan-Tung Road, Chungli, 320 Taoyuan, TaiwanThe amorphous silicon/amorphous silicon (a-Si/a-Si) tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD) at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p+ recombination layer and i2/i1 thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (Voc) of 1.59 V, short-circuit current density (Jsc) of 7.96 mA/cm2, and a fill factor (FF) of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p+ recombination layer shows the excellent stability and the stabilized efficiency of 8.7%.http://dx.doi.org/10.1155/2011/264709 |
| spellingShingle | Yang-Shin Lin Shui-Yang Lien Chao-Chun Wang Chia-Hsun Hsu Chih-Hsiang Yang Asheesh Nautiyal Dong-Sing Wuu Pi-Chuen Tsai Shuo-Jen Lee Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells International Journal of Photoenergy |
| title | Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells |
| title_full | Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells |
| title_fullStr | Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells |
| title_full_unstemmed | Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells |
| title_short | Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells |
| title_sort | optimization of recombination layer in the tunnel junction of amorphous silicon thin film tandem solar cells |
| url | http://dx.doi.org/10.1155/2011/264709 |
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