High-Efficiency Continuous Wave 16 W–7.5 GHz Power Amplifier With a GaN Transistor in Plastic Packaging
This paper presents an alternative solution for higher frequency power amplifier design. Using a plastic-packaged GaN transistor and high-efficiency design techniques, a power amplifier for the space-to-earth satellite was designed and fabricated. The proposed design approach relies on determining a...
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| Format: | Article |
| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/10839481/ |
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| author | Alireza Sadeghi-Fard Sayyed-Hossein Javid-Hosseini Vahid Nayyeri Paolo Colantonio |
| author_facet | Alireza Sadeghi-Fard Sayyed-Hossein Javid-Hosseini Vahid Nayyeri Paolo Colantonio |
| author_sort | Alireza Sadeghi-Fard |
| collection | DOAJ |
| description | This paper presents an alternative solution for higher frequency power amplifier design. Using a plastic-packaged GaN transistor and high-efficiency design techniques, a power amplifier for the space-to-earth satellite was designed and fabricated. The proposed design approach relies on determining an appropriate design space for the matching networks, defined by identifying optimal power and efficiency contours derived from source/load-pull techniques. The fabricated amplifier achieved in continuous wave (CW) a saturated output power of 41.7–42.4 dBm in the entire frequency band of 7.25–7.85 GHz while maintaining a drain efficiency of 35–39 %. Thermal simulations and measurements demonstrate stable and safe operating conditions in CW operation. |
| format | Article |
| id | doaj-art-576e0868ef9c4f769331d349bcd6b725 |
| institution | Kabale University |
| issn | 2169-3536 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj-art-576e0868ef9c4f769331d349bcd6b7252025-01-21T00:01:08ZengIEEEIEEE Access2169-35362025-01-0113105351054110.1109/ACCESS.2025.352843010839481High-Efficiency Continuous Wave 16 W–7.5 GHz Power Amplifier With a GaN Transistor in Plastic PackagingAlireza Sadeghi-Fard0Sayyed-Hossein Javid-Hosseini1https://orcid.org/0000-0003-3906-0628Vahid Nayyeri2https://orcid.org/0000-0002-0328-4737Paolo Colantonio3https://orcid.org/0000-0002-5788-1262School of Advanced Technologies, Iran University of Science and Technology, Tehran, IranSchool of Advanced Technologies, Iran University of Science and Technology, Tehran, IranSchool of Advanced Technologies, Iran University of Science and Technology, Tehran, IranDepartment of Electronic Engineering, University of Roma Tor Vergata, Rome, ItalyThis paper presents an alternative solution for higher frequency power amplifier design. Using a plastic-packaged GaN transistor and high-efficiency design techniques, a power amplifier for the space-to-earth satellite was designed and fabricated. The proposed design approach relies on determining an appropriate design space for the matching networks, defined by identifying optimal power and efficiency contours derived from source/load-pull techniques. The fabricated amplifier achieved in continuous wave (CW) a saturated output power of 41.7–42.4 dBm in the entire frequency band of 7.25–7.85 GHz while maintaining a drain efficiency of 35–39 %. Thermal simulations and measurements demonstrate stable and safe operating conditions in CW operation.https://ieeexplore.ieee.org/document/10839481/High efficiencypower amplifiersatellite communicationsurface-mount packages |
| spellingShingle | Alireza Sadeghi-Fard Sayyed-Hossein Javid-Hosseini Vahid Nayyeri Paolo Colantonio High-Efficiency Continuous Wave 16 W–7.5 GHz Power Amplifier With a GaN Transistor in Plastic Packaging IEEE Access High efficiency power amplifier satellite communication surface-mount packages |
| title | High-Efficiency Continuous Wave 16 W–7.5 GHz Power Amplifier With a GaN Transistor in Plastic Packaging |
| title_full | High-Efficiency Continuous Wave 16 W–7.5 GHz Power Amplifier With a GaN Transistor in Plastic Packaging |
| title_fullStr | High-Efficiency Continuous Wave 16 W–7.5 GHz Power Amplifier With a GaN Transistor in Plastic Packaging |
| title_full_unstemmed | High-Efficiency Continuous Wave 16 W–7.5 GHz Power Amplifier With a GaN Transistor in Plastic Packaging |
| title_short | High-Efficiency Continuous Wave 16 W–7.5 GHz Power Amplifier With a GaN Transistor in Plastic Packaging |
| title_sort | high efficiency continuous wave 16 w x2013 7 5 ghz power amplifier with a gan transistor in plastic packaging |
| topic | High efficiency power amplifier satellite communication surface-mount packages |
| url | https://ieeexplore.ieee.org/document/10839481/ |
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