Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence
Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H) films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ) solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/251508 |
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| author | Taweewat Krajangsang Apichan Moollakorn Sorapong Inthisang Amornrat Limmanee Kobsak Sriprapha Nattaphong Boriraksantikul Tianchai Taratiwat Nirod Akarapanjavit Jaran Sritharathikhun |
| author_facet | Taweewat Krajangsang Apichan Moollakorn Sorapong Inthisang Amornrat Limmanee Kobsak Sriprapha Nattaphong Boriraksantikul Tianchai Taratiwat Nirod Akarapanjavit Jaran Sritharathikhun |
| author_sort | Taweewat Krajangsang |
| collection | DOAJ |
| description | Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H) films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ) solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc), fill factor (FF), and temperature coefficient (TC) of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79). The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C. |
| format | Article |
| id | doaj-art-56233849cb7d48d3898e24995737e2f3 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-56233849cb7d48d3898e24995737e2f32025-02-03T05:52:17ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/251508251508Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature DependenceTaweewat Krajangsang0Apichan Moollakorn1Sorapong Inthisang2Amornrat Limmanee3Kobsak Sriprapha4Nattaphong Boriraksantikul5Tianchai Taratiwat6Nirod Akarapanjavit7Jaran Sritharathikhun8Solar Energy Technology Laboratory (STL), National Electronics and Computer Technology Center (NECTEC), Pathumthani 12120, ThailandSolar Energy Technology Laboratory (STL), National Electronics and Computer Technology Center (NECTEC), Pathumthani 12120, ThailandSolar Energy Technology Laboratory (STL), National Electronics and Computer Technology Center (NECTEC), Pathumthani 12120, ThailandSolar Energy Technology Laboratory (STL), National Electronics and Computer Technology Center (NECTEC), Pathumthani 12120, ThailandSolar Energy Technology Laboratory (STL), National Electronics and Computer Technology Center (NECTEC), Pathumthani 12120, ThailandPTT Research & Technology Institute, PTT Public Company Limited, Phra Nakhon Si Ayutthaya 13170, ThailandPTT Research & Technology Institute, PTT Public Company Limited, Phra Nakhon Si Ayutthaya 13170, ThailandPTT Research & Technology Institute, PTT Public Company Limited, Phra Nakhon Si Ayutthaya 13170, ThailandSolar Energy Technology Laboratory (STL), National Electronics and Computer Technology Center (NECTEC), Pathumthani 12120, ThailandIntrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H) films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ) solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc), fill factor (FF), and temperature coefficient (TC) of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79). The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.http://dx.doi.org/10.1155/2014/251508 |
| spellingShingle | Taweewat Krajangsang Apichan Moollakorn Sorapong Inthisang Amornrat Limmanee Kobsak Sriprapha Nattaphong Boriraksantikul Tianchai Taratiwat Nirod Akarapanjavit Jaran Sritharathikhun Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence International Journal of Photoenergy |
| title | Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence |
| title_full | Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence |
| title_fullStr | Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence |
| title_full_unstemmed | Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence |
| title_short | Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence |
| title_sort | study of an amorphous silicon oxide buffer layer for p type microcrystalline silicon oxide n type crystalline silicon heterojunction solar cells and their temperature dependence |
| url | http://dx.doi.org/10.1155/2014/251508 |
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