Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence
Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H) films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ) solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/251508 |
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| Summary: | Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H) films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ) solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc), fill factor (FF), and temperature coefficient (TC) of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79). The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C. |
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| ISSN: | 1110-662X 1687-529X |