Simulating the pre‐ and de‐emphasis of drive voltages of silicon‐based micro‐ring ring‐modulators
Integrated modulators are being intensely investigated and became potential candidates for the fundamental building blocks of next generation silicon‐based front‐end transceivers. Although suitable optical performance has been demonstrated in several works, theoretical models for the appropriate dri...
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| Format: | Article |
| Language: | English |
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Wiley
2017-03-01
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| Series: | Electronics Letters |
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| Online Access: | https://doi.org/10.1049/el.2016.3650 |
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| author | S. Tenenbaum |
| author_facet | S. Tenenbaum |
| author_sort | S. Tenenbaum |
| collection | DOAJ |
| description | Integrated modulators are being intensely investigated and became potential candidates for the fundamental building blocks of next generation silicon‐based front‐end transceivers. Although suitable optical performance has been demonstrated in several works, theoretical models for the appropriate driving conditions of the micro‐ring modulators are rarely explored. The carrier concentration fundamentally determines the refraction index of the pn junction of the modulator and to accelerate charge injection/extraction a pre‐ and de‐emphasised driving voltage technique has been widely and successfully applied. Here we present a mathematical model where shooting amplitude and duration are considered with an optimised power consumption analysis. The model can be applied for both NRZ and RZ modulation formats. |
| format | Article |
| id | doaj-art-546099e1165449a9b861d554faab9749 |
| institution | Kabale University |
| issn | 0013-5194 1350-911X |
| language | English |
| publishDate | 2017-03-01 |
| publisher | Wiley |
| record_format | Article |
| series | Electronics Letters |
| spelling | doaj-art-546099e1165449a9b861d554faab97492025-02-05T12:30:43ZengWileyElectronics Letters0013-51941350-911X2017-03-0153533333510.1049/el.2016.3650Simulating the pre‐ and de‐emphasis of drive voltages of silicon‐based micro‐ring ring‐modulatorsS. Tenenbaum0Centro de Tecnologia da Informação Renato ArcherRodovia Dom Pedro I (SP‐65), Km 143,6, Amarais, Campinas, SP,‐ CEP, 13069BrazilIntegrated modulators are being intensely investigated and became potential candidates for the fundamental building blocks of next generation silicon‐based front‐end transceivers. Although suitable optical performance has been demonstrated in several works, theoretical models for the appropriate driving conditions of the micro‐ring modulators are rarely explored. The carrier concentration fundamentally determines the refraction index of the pn junction of the modulator and to accelerate charge injection/extraction a pre‐ and de‐emphasised driving voltage technique has been widely and successfully applied. Here we present a mathematical model where shooting amplitude and duration are considered with an optimised power consumption analysis. The model can be applied for both NRZ and RZ modulation formats.https://doi.org/10.1049/el.2016.3650integrated modulatorsilicon‐based front‐end transceiveroptical performancemicroring modulatorpn junctioncharge injection‐extraction acceleration |
| spellingShingle | S. Tenenbaum Simulating the pre‐ and de‐emphasis of drive voltages of silicon‐based micro‐ring ring‐modulators Electronics Letters integrated modulator silicon‐based front‐end transceiver optical performance microring modulator pn junction charge injection‐extraction acceleration |
| title | Simulating the pre‐ and de‐emphasis of drive voltages of silicon‐based micro‐ring ring‐modulators |
| title_full | Simulating the pre‐ and de‐emphasis of drive voltages of silicon‐based micro‐ring ring‐modulators |
| title_fullStr | Simulating the pre‐ and de‐emphasis of drive voltages of silicon‐based micro‐ring ring‐modulators |
| title_full_unstemmed | Simulating the pre‐ and de‐emphasis of drive voltages of silicon‐based micro‐ring ring‐modulators |
| title_short | Simulating the pre‐ and de‐emphasis of drive voltages of silicon‐based micro‐ring ring‐modulators |
| title_sort | simulating the pre and de emphasis of drive voltages of silicon based micro ring ring modulators |
| topic | integrated modulator silicon‐based front‐end transceiver optical performance microring modulator pn junction charge injection‐extraction acceleration |
| url | https://doi.org/10.1049/el.2016.3650 |
| work_keys_str_mv | AT stenenbaum simulatingthepreanddeemphasisofdrivevoltagesofsiliconbasedmicroringringmodulators |