Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire
β-Ga2O3 is regarded as a promising candidate for next-generation high-power devices; however, the impact of material quality on device performance is significant and not yet well understood. In this study, β-Ga2O3 heteroepilayers were grown on c-plane sapphire using metalorganic chemical vapor depos...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
|
| Series: | Applied Surface Science Advances |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666523925000200 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832540388844371968 |
|---|---|
| author | Yueh-Han Chuang Fu-Gow Tarntair Tzu-Wei Wang Anoop Kumar Singh Po-Liang Liu Dong-Sing Wuu Hao-Chung Kuo Xiuling Li Ray-Hua Horng |
| author_facet | Yueh-Han Chuang Fu-Gow Tarntair Tzu-Wei Wang Anoop Kumar Singh Po-Liang Liu Dong-Sing Wuu Hao-Chung Kuo Xiuling Li Ray-Hua Horng |
| author_sort | Yueh-Han Chuang |
| collection | DOAJ |
| description | β-Ga2O3 is regarded as a promising candidate for next-generation high-power devices; however, the impact of material quality on device performance is significant and not yet well understood. In this study, β-Ga2O3 heteroepilayers were grown on c-plane sapphire using metalorganic chemical vapor deposition (MOCVD) at three different O2 flow rates. Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were then fabricated with a gate-recessed process, incorporating a 5 µm gate field plate structure. Higher O2 flow rates resulted in increased breakdown voltage. X-ray photoelectron spectroscopy analysis suggests that this improvement is due to reduced oxygen vacancies and minimized Al diffusion from the substrate. First-principle simulations further confirmed this phenomenon. |
| format | Article |
| id | doaj-art-53f5fd5d32da4700a7048af9330367ab |
| institution | Kabale University |
| issn | 2666-5239 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Applied Surface Science Advances |
| spelling | doaj-art-53f5fd5d32da4700a7048af9330367ab2025-02-05T04:32:41ZengElsevierApplied Surface Science Advances2666-52392025-03-0126100711Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphireYueh-Han Chuang0Fu-Gow Tarntair1Tzu-Wei Wang2Anoop Kumar Singh3Po-Liang Liu4Dong-Sing Wuu5Hao-Chung Kuo6Xiuling Li7Ray-Hua Horng8Institute of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC; Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROCInstitute of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROCGraduate Institute of Precision Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROCDepartment of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Taiwan, ROCGraduate Institute of Precision Engineering, National Chung Hsing University, Taichung 40227, Taiwan, ROC; Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Taiwan, ROCDepartment of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Taiwan, ROCDepartment of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang-Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROCDepartment of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, TX 78758, USAInstitute of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC; Corresponding author.β-Ga2O3 is regarded as a promising candidate for next-generation high-power devices; however, the impact of material quality on device performance is significant and not yet well understood. In this study, β-Ga2O3 heteroepilayers were grown on c-plane sapphire using metalorganic chemical vapor deposition (MOCVD) at three different O2 flow rates. Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were then fabricated with a gate-recessed process, incorporating a 5 µm gate field plate structure. Higher O2 flow rates resulted in increased breakdown voltage. X-ray photoelectron spectroscopy analysis suggests that this improvement is due to reduced oxygen vacancies and minimized Al diffusion from the substrate. First-principle simulations further confirmed this phenomenon.http://www.sciencedirect.com/science/article/pii/S2666523925000200Al diffusionꞵ-Ga2O3Enhancement-mode MOSFETsGate field plateMOCVDOxygen vacancies |
| spellingShingle | Yueh-Han Chuang Fu-Gow Tarntair Tzu-Wei Wang Anoop Kumar Singh Po-Liang Liu Dong-Sing Wuu Hao-Chung Kuo Xiuling Li Ray-Hua Horng Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire Applied Surface Science Advances Al diffusion ꞵ-Ga2O3 Enhancement-mode MOSFETs Gate field plate MOCVD Oxygen vacancies |
| title | Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire |
| title_full | Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire |
| title_fullStr | Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire |
| title_full_unstemmed | Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire |
| title_short | Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire |
| title_sort | oxygen effect on the performance of β ga2o3 enhancement mode mosfets heteroepitaxially grown on a sapphire |
| topic | Al diffusion ꞵ-Ga2O3 Enhancement-mode MOSFETs Gate field plate MOCVD Oxygen vacancies |
| url | http://www.sciencedirect.com/science/article/pii/S2666523925000200 |
| work_keys_str_mv | AT yuehhanchuang oxygeneffectontheperformanceofbga2o3enhancementmodemosfetsheteroepitaxiallygrownonasapphire AT fugowtarntair oxygeneffectontheperformanceofbga2o3enhancementmodemosfetsheteroepitaxiallygrownonasapphire AT tzuweiwang oxygeneffectontheperformanceofbga2o3enhancementmodemosfetsheteroepitaxiallygrownonasapphire AT anoopkumarsingh oxygeneffectontheperformanceofbga2o3enhancementmodemosfetsheteroepitaxiallygrownonasapphire AT poliangliu oxygeneffectontheperformanceofbga2o3enhancementmodemosfetsheteroepitaxiallygrownonasapphire AT dongsingwuu oxygeneffectontheperformanceofbga2o3enhancementmodemosfetsheteroepitaxiallygrownonasapphire AT haochungkuo oxygeneffectontheperformanceofbga2o3enhancementmodemosfetsheteroepitaxiallygrownonasapphire AT xiulingli oxygeneffectontheperformanceofbga2o3enhancementmodemosfetsheteroepitaxiallygrownonasapphire AT rayhuahorng oxygeneffectontheperformanceofbga2o3enhancementmodemosfetsheteroepitaxiallygrownonasapphire |