Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force Microscopy
The effect of resistive switching in the yttria stabilized zirconia (YSZ) thin films on Si substrates has been studied by Conductive Atomic Force Microscopy (CAFM). The resistive switching of the YSZ films from the low conductive state to the highly conductive one has been found to be associated wit...
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/104657 |
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| author | Oleg Gorshkov Dmitry Filatov Dmitry Antonov Ivan Antonov |
| author_facet | Oleg Gorshkov Dmitry Filatov Dmitry Antonov Ivan Antonov |
| author_sort | Oleg Gorshkov |
| collection | DOAJ |
| description | The effect of resistive switching in the yttria stabilized zirconia (YSZ) thin films on Si substrates has been studied by Conductive Atomic Force Microscopy (CAFM). The resistive switching of the YSZ films from the low conductive state to the highly conductive one has been found to be associated with the increasing of the noise with broad frequency spectrum related to the redistribution of the oxygen vacancies in YSZ. The electrical oscillations in oscillation loop connected in series to the CAFM probe, the sample, and the bias source related to the excitation of the oscillation loop by the noise in the probe-to-sample contact film have been observed. The effect discovered is promising for application in the memristor devices of new generation. |
| format | Article |
| id | doaj-art-53275438c4da4276b3a216fc83b7f4dd |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-53275438c4da4276b3a216fc83b7f4dd2025-02-03T06:11:02ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242015-01-01201510.1155/2015/104657104657Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force MicroscopyOleg Gorshkov0Dmitry Filatov1Dmitry Antonov2Ivan Antonov3N. I. Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Avenue, Building 3, Nizhny Novgorod 603950, RussiaN. I. Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Avenue, Building 3, Nizhny Novgorod 603950, RussiaN. I. Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Avenue, Building 3, Nizhny Novgorod 603950, RussiaN. I. Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Avenue, Building 3, Nizhny Novgorod 603950, RussiaThe effect of resistive switching in the yttria stabilized zirconia (YSZ) thin films on Si substrates has been studied by Conductive Atomic Force Microscopy (CAFM). The resistive switching of the YSZ films from the low conductive state to the highly conductive one has been found to be associated with the increasing of the noise with broad frequency spectrum related to the redistribution of the oxygen vacancies in YSZ. The electrical oscillations in oscillation loop connected in series to the CAFM probe, the sample, and the bias source related to the excitation of the oscillation loop by the noise in the probe-to-sample contact film have been observed. The effect discovered is promising for application in the memristor devices of new generation.http://dx.doi.org/10.1155/2015/104657 |
| spellingShingle | Oleg Gorshkov Dmitry Filatov Dmitry Antonov Ivan Antonov Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force Microscopy Advances in Condensed Matter Physics |
| title | Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force Microscopy |
| title_full | Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force Microscopy |
| title_fullStr | Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force Microscopy |
| title_full_unstemmed | Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force Microscopy |
| title_short | Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force Microscopy |
| title_sort | noise and electrical oscillations generation during the investigation of the resistive switching in the yttria stabilized zirconia films by conductive atomic force microscopy |
| url | http://dx.doi.org/10.1155/2015/104657 |
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