Modeling of Transistor's Tracking Behavior in Compact Models

We present a novel method to model the tracking behavior of semiconductor transistors undergoing across-chip variations in a compact Monte Carlo model for SPICE simulations and show an enablement of simultaneous 𝑁(𝑁−1)/2 tracking relations among 𝑁 transistors on a chip at any poly density, any gate...

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Main Author: Ning Lu
Format: Article
Language:English
Published: Wiley 2011-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/2011/684954
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author Ning Lu
author_facet Ning Lu
author_sort Ning Lu
collection DOAJ
description We present a novel method to model the tracking behavior of semiconductor transistors undergoing across-chip variations in a compact Monte Carlo model for SPICE simulations and show an enablement of simultaneous 𝑁(𝑁−1)/2 tracking relations among 𝑁 transistors on a chip at any poly density, any gate pitch, and any physical location for the first time. At smaller separations, our modeled tracking relation versus physical location reduces to Pelgrom's characterization on device's distance-dependent mismatch. Our method is very compact, since we do not use a matrix or a set of eigen solutions to represent correlations among 𝑁 transistors.
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institution Kabale University
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publishDate 2011-01-01
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spelling doaj-art-5294288ecb8d461a88a1711b69126dc62025-02-03T05:58:48ZengWileyActive and Passive Electronic Components0882-75161563-50312011-01-01201110.1155/2011/684954684954Modeling of Transistor's Tracking Behavior in Compact ModelsNing Lu0IBM Semiconductor Research and Development Center, System and Technology Group, Mail Stop 972F, 1000 River Street, Essex Junction, VT 05452, USAWe present a novel method to model the tracking behavior of semiconductor transistors undergoing across-chip variations in a compact Monte Carlo model for SPICE simulations and show an enablement of simultaneous 𝑁(𝑁−1)/2 tracking relations among 𝑁 transistors on a chip at any poly density, any gate pitch, and any physical location for the first time. At smaller separations, our modeled tracking relation versus physical location reduces to Pelgrom's characterization on device's distance-dependent mismatch. Our method is very compact, since we do not use a matrix or a set of eigen solutions to represent correlations among 𝑁 transistors.http://dx.doi.org/10.1155/2011/684954
spellingShingle Ning Lu
Modeling of Transistor's Tracking Behavior in Compact Models
Active and Passive Electronic Components
title Modeling of Transistor's Tracking Behavior in Compact Models
title_full Modeling of Transistor's Tracking Behavior in Compact Models
title_fullStr Modeling of Transistor's Tracking Behavior in Compact Models
title_full_unstemmed Modeling of Transistor's Tracking Behavior in Compact Models
title_short Modeling of Transistor's Tracking Behavior in Compact Models
title_sort modeling of transistor s tracking behavior in compact models
url http://dx.doi.org/10.1155/2011/684954
work_keys_str_mv AT ninglu modelingoftransistorstrackingbehaviorincompactmodels