Modeling of Transistor's Tracking Behavior in Compact Models
We present a novel method to model the tracking behavior of semiconductor transistors undergoing across-chip variations in a compact Monte Carlo model for SPICE simulations and show an enablement of simultaneous 𝑁(𝑁−1)/2 tracking relations among 𝑁 transistors on a chip at any poly density, any gate...
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Format: | Article |
Language: | English |
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Wiley
2011-01-01
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Series: | Active and Passive Electronic Components |
Online Access: | http://dx.doi.org/10.1155/2011/684954 |
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author | Ning Lu |
author_facet | Ning Lu |
author_sort | Ning Lu |
collection | DOAJ |
description | We present a novel method to model the tracking behavior of semiconductor transistors undergoing across-chip variations in a compact Monte Carlo model for SPICE simulations and show an enablement of simultaneous 𝑁(𝑁−1)/2 tracking relations among 𝑁 transistors on a chip at any poly density, any gate pitch, and any physical location for the first time. At smaller separations, our modeled tracking relation versus physical location reduces to Pelgrom's characterization on device's distance-dependent mismatch. Our method is very compact, since we do not use a matrix or a set of eigen solutions to represent correlations among 𝑁 transistors. |
format | Article |
id | doaj-art-5294288ecb8d461a88a1711b69126dc6 |
institution | Kabale University |
issn | 0882-7516 1563-5031 |
language | English |
publishDate | 2011-01-01 |
publisher | Wiley |
record_format | Article |
series | Active and Passive Electronic Components |
spelling | doaj-art-5294288ecb8d461a88a1711b69126dc62025-02-03T05:58:48ZengWileyActive and Passive Electronic Components0882-75161563-50312011-01-01201110.1155/2011/684954684954Modeling of Transistor's Tracking Behavior in Compact ModelsNing Lu0IBM Semiconductor Research and Development Center, System and Technology Group, Mail Stop 972F, 1000 River Street, Essex Junction, VT 05452, USAWe present a novel method to model the tracking behavior of semiconductor transistors undergoing across-chip variations in a compact Monte Carlo model for SPICE simulations and show an enablement of simultaneous 𝑁(𝑁−1)/2 tracking relations among 𝑁 transistors on a chip at any poly density, any gate pitch, and any physical location for the first time. At smaller separations, our modeled tracking relation versus physical location reduces to Pelgrom's characterization on device's distance-dependent mismatch. Our method is very compact, since we do not use a matrix or a set of eigen solutions to represent correlations among 𝑁 transistors.http://dx.doi.org/10.1155/2011/684954 |
spellingShingle | Ning Lu Modeling of Transistor's Tracking Behavior in Compact Models Active and Passive Electronic Components |
title | Modeling of Transistor's Tracking Behavior in Compact Models |
title_full | Modeling of Transistor's Tracking Behavior in Compact Models |
title_fullStr | Modeling of Transistor's Tracking Behavior in Compact Models |
title_full_unstemmed | Modeling of Transistor's Tracking Behavior in Compact Models |
title_short | Modeling of Transistor's Tracking Behavior in Compact Models |
title_sort | modeling of transistor s tracking behavior in compact models |
url | http://dx.doi.org/10.1155/2011/684954 |
work_keys_str_mv | AT ninglu modelingoftransistorstrackingbehaviorincompactmodels |