Stress Analysis of the Interface Reaction Layer Between Ni–P Films and GaAs Substrate After Annealing

Stress Analysis of the Interface Reaction Layer Between Ni–P Films and GaAs Substrate After Annealing

Electroless Ni–P plating films, used as the seed layers for the backside electrodes of gallium arsenide (GaAs) semiconductor devices, cause substrate warping (wafer warpage) during annealing, leading to substrate cracking and chipping. In this study, Ni–P films with different P concentrations (6, 17...

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Bibliographic Details
Main Authors: Koichiro NISHIZAWA, Ayumu MATSUMOTO, Yasuyuki NAKAGAWA, Hitoshi SAKUMA, Yoshiki KOJIMA, Naoki FUKUMURO, Shinji YAE
Format: Article
Language:English
Published: The Electrochemical Society of Japan 2024-12-01
Series:Electrochemistry
Subjects:
amorphous
microcrystals
galvanic substitution
palladium catalyst
Online Access:https://www.jstage.jst.go.jp/article/electrochemistry/92/12/92_24-00101/_html/-char/en
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