Switching and memory effects in thin film disoder chalcoginide semiconductors
The possibility of creation of thin film memory elements and threshold switching elements on the base of one chalcogenide - tellurium is analyzed in the proposed article.
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| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/1075 |
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