Microstructural and Dielectric Properties of Zr Doped Microwave Sintered CaCu3Ti4O12 Synthesized by Sol-Gel Route

Polycrystalline samples with the chemical formula CaCu3Ti4-xZrxO12 (x=0, 0.02, 0.1, 0.2, 0.5, and 0.1) CCTZO were synthesized from metal nitrate solutions by the sol-gel method, followed by conventional and microwave heat treatments. The X-ray diffraction pattern of powder calcined at 800°C in conve...

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Main Authors: S. Jesurani, S. Kanagesan, M. Hashim, I. Ismail, I. R. Ibrahim
Format: Article
Language:English
Published: Wiley 2014-01-01
Series:Advances in Materials Science and Engineering
Online Access:http://dx.doi.org/10.1155/2014/187420
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author S. Jesurani
S. Kanagesan
M. Hashim
I. Ismail
I. R. Ibrahim
author_facet S. Jesurani
S. Kanagesan
M. Hashim
I. Ismail
I. R. Ibrahim
author_sort S. Jesurani
collection DOAJ
description Polycrystalline samples with the chemical formula CaCu3Ti4-xZrxO12 (x=0, 0.02, 0.1, 0.2, 0.5, and 0.1) CCTZO were synthesized from metal nitrate solutions by the sol-gel method, followed by conventional and microwave heat treatments. The X-ray diffraction pattern of powder calcined at 800°C in conventional furnace for 3 h showed formation of a single phase. The crystal structure did not change on doping with zirconium and it remained cubic in the five studied compositions. The surface morphology of samples sintered at 1000°C in microwave furnace for 10 min was observed using a high resolution scanning electron microscope (HR-SEM). The grain sizes were in the range of 250 nm–5 μm for these samples. HRSEM results show that doping with Zr enhanced grain growth or densification. Energy dispersive X-ray spectroscopy (EDX) confirmed the presence of Zr. The dielectric characteristics of Zr doped CCTO were studied with an LCR meter in the frequency range of 50 Hz–1 MHz. A very high dielectric constant 21,500 was observed for the sample doped with Zr (0.02 mol%) at 50 Hz.
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series Advances in Materials Science and Engineering
spelling doaj-art-514276c987cc4e80b611c6738eeec3ca2025-02-03T01:33:10ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422014-01-01201410.1155/2014/187420187420Microstructural and Dielectric Properties of Zr Doped Microwave Sintered CaCu3Ti4O12 Synthesized by Sol-Gel RouteS. Jesurani0S. Kanagesan1M. Hashim2I. Ismail3I. R. Ibrahim4Department of Physics, Jayaraj Annapackiam College for Women, Periyakulam, Tamil Nadu 625601, IndiaMaterials Synthesis and Characterization Laboratory (MSCL), Institute of Advanced Technology (ITMA), Universiti Putra Malaysia, 43400 Serdang, Selangor, MalaysiaMaterials Synthesis and Characterization Laboratory (MSCL), Institute of Advanced Technology (ITMA), Universiti Putra Malaysia, 43400 Serdang, Selangor, MalaysiaMaterials Synthesis and Characterization Laboratory (MSCL), Institute of Advanced Technology (ITMA), Universiti Putra Malaysia, 43400 Serdang, Selangor, MalaysiaMaterials Synthesis and Characterization Laboratory (MSCL), Institute of Advanced Technology (ITMA), Universiti Putra Malaysia, 43400 Serdang, Selangor, MalaysiaPolycrystalline samples with the chemical formula CaCu3Ti4-xZrxO12 (x=0, 0.02, 0.1, 0.2, 0.5, and 0.1) CCTZO were synthesized from metal nitrate solutions by the sol-gel method, followed by conventional and microwave heat treatments. The X-ray diffraction pattern of powder calcined at 800°C in conventional furnace for 3 h showed formation of a single phase. The crystal structure did not change on doping with zirconium and it remained cubic in the five studied compositions. The surface morphology of samples sintered at 1000°C in microwave furnace for 10 min was observed using a high resolution scanning electron microscope (HR-SEM). The grain sizes were in the range of 250 nm–5 μm for these samples. HRSEM results show that doping with Zr enhanced grain growth or densification. Energy dispersive X-ray spectroscopy (EDX) confirmed the presence of Zr. The dielectric characteristics of Zr doped CCTO were studied with an LCR meter in the frequency range of 50 Hz–1 MHz. A very high dielectric constant 21,500 was observed for the sample doped with Zr (0.02 mol%) at 50 Hz.http://dx.doi.org/10.1155/2014/187420
spellingShingle S. Jesurani
S. Kanagesan
M. Hashim
I. Ismail
I. R. Ibrahim
Microstructural and Dielectric Properties of Zr Doped Microwave Sintered CaCu3Ti4O12 Synthesized by Sol-Gel Route
Advances in Materials Science and Engineering
title Microstructural and Dielectric Properties of Zr Doped Microwave Sintered CaCu3Ti4O12 Synthesized by Sol-Gel Route
title_full Microstructural and Dielectric Properties of Zr Doped Microwave Sintered CaCu3Ti4O12 Synthesized by Sol-Gel Route
title_fullStr Microstructural and Dielectric Properties of Zr Doped Microwave Sintered CaCu3Ti4O12 Synthesized by Sol-Gel Route
title_full_unstemmed Microstructural and Dielectric Properties of Zr Doped Microwave Sintered CaCu3Ti4O12 Synthesized by Sol-Gel Route
title_short Microstructural and Dielectric Properties of Zr Doped Microwave Sintered CaCu3Ti4O12 Synthesized by Sol-Gel Route
title_sort microstructural and dielectric properties of zr doped microwave sintered cacu3ti4o12 synthesized by sol gel route
url http://dx.doi.org/10.1155/2014/187420
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