Fabrication of Si3N4 Nanocrystals and Nanowires Using PECVD
Si3N4 nanowires and nanocrystals were prepared on Si substrates with or without Fe catalyst using silane (SiH4) and nitrogen (N2) as reactive gases through plasma-enhanced chemical vapor deposition (PECVD) technology. With Fe catalyst, Si3N4 nanowires were developed, indicating that Fe catalyst play...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2010-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2010/892792 |
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| author | Jingwei Song Xiying Ma Wang Zui Chen Wei Zhongpin Chen |
| author_facet | Jingwei Song Xiying Ma Wang Zui Chen Wei Zhongpin Chen |
| author_sort | Jingwei Song |
| collection | DOAJ |
| description | Si3N4 nanowires and nanocrystals were prepared on Si substrates with or without Fe catalyst using silane (SiH4) and nitrogen (N2) as reactive gases through plasma-enhanced chemical vapor deposition (PECVD) technology. With Fe catalyst, Si3N4 nanowires were developed, indicating that Fe catalyst played a role for Si3N4 molecules directionally depositing into strings. The density of the nanowires is closely related to the density of Fe catalyst. When the density of Fe ions on the substrate was decreased remarkably, a smooth superlong Si3N4 nanowire with 12 μm in length was fabricated. Having analyzed the growth mechanism, a growth model for Si3N4 nanowires was developed. The growth of Si3N4 nanocrystallines was attributed to be a vapor-solid (V-S) deposition process. |
| format | Article |
| id | doaj-art-50863098c3eb4ebcad26bb09b76edeea |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2010-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-50863098c3eb4ebcad26bb09b76edeea2025-02-03T06:12:11ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422010-01-01201010.1155/2010/892792892792Fabrication of Si3N4 Nanocrystals and Nanowires Using PECVDJingwei Song0Xiying Ma1Wang Zui2Chen Wei3Zhongpin Chen4School of Mathmatics and Physics, Suzhou University of Science and Technology, 1701 Binhe Road, Suzhou, 215011 Jiangsu, ChinaSchool of Mathmatics and Physics, Suzhou University of Science and Technology, 1701 Binhe Road, Suzhou, 215011 Jiangsu, ChinaSchool of Mathmatics and Physics, Suzhou University of Science and Technology, 1701 Binhe Road, Suzhou, 215011 Jiangsu, ChinaSchool of Mathmatics and Physics, Suzhou University of Science and Technology, 1701 Binhe Road, Suzhou, 215011 Jiangsu, ChinaSchool of Mathmatics and Physics, Suzhou University of Science and Technology, 1701 Binhe Road, Suzhou, 215011 Jiangsu, ChinaSi3N4 nanowires and nanocrystals were prepared on Si substrates with or without Fe catalyst using silane (SiH4) and nitrogen (N2) as reactive gases through plasma-enhanced chemical vapor deposition (PECVD) technology. With Fe catalyst, Si3N4 nanowires were developed, indicating that Fe catalyst played a role for Si3N4 molecules directionally depositing into strings. The density of the nanowires is closely related to the density of Fe catalyst. When the density of Fe ions on the substrate was decreased remarkably, a smooth superlong Si3N4 nanowire with 12 μm in length was fabricated. Having analyzed the growth mechanism, a growth model for Si3N4 nanowires was developed. The growth of Si3N4 nanocrystallines was attributed to be a vapor-solid (V-S) deposition process.http://dx.doi.org/10.1155/2010/892792 |
| spellingShingle | Jingwei Song Xiying Ma Wang Zui Chen Wei Zhongpin Chen Fabrication of Si3N4 Nanocrystals and Nanowires Using PECVD Advances in Materials Science and Engineering |
| title | Fabrication of Si3N4 Nanocrystals and Nanowires Using PECVD |
| title_full | Fabrication of Si3N4 Nanocrystals and Nanowires Using PECVD |
| title_fullStr | Fabrication of Si3N4 Nanocrystals and Nanowires Using PECVD |
| title_full_unstemmed | Fabrication of Si3N4 Nanocrystals and Nanowires Using PECVD |
| title_short | Fabrication of Si3N4 Nanocrystals and Nanowires Using PECVD |
| title_sort | fabrication of si3n4 nanocrystals and nanowires using pecvd |
| url | http://dx.doi.org/10.1155/2010/892792 |
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