Voltage Control of Exchange Bias via Magneto-Ionic Approaches

The exchange bias (EB) effect denotes a magnetic bias phenomenon originating from the interfacial exchange coupling at the ferromagnetic/antiferromagnetic materials, which plays an indispensable role in the functionality of various devices, such as magnetic random-access memory (MRAM) and sensors. V...

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Main Authors: Yifu Luo, Shengsheng Liu, Yuxin Li, Zhen Wang, Jie Zhang, Limei Zheng
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Crystals
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Online Access:https://www.mdpi.com/2073-4352/15/1/77
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author Yifu Luo
Shengsheng Liu
Yuxin Li
Zhen Wang
Jie Zhang
Limei Zheng
author_facet Yifu Luo
Shengsheng Liu
Yuxin Li
Zhen Wang
Jie Zhang
Limei Zheng
author_sort Yifu Luo
collection DOAJ
description The exchange bias (EB) effect denotes a magnetic bias phenomenon originating from the interfacial exchange coupling at the ferromagnetic/antiferromagnetic materials, which plays an indispensable role in the functionality of various devices, such as magnetic random-access memory (MRAM) and sensors. Voltage control of exchange bias offers a promising pathway to significantly reduce device power consumption, effectively fostering the evolution of low-energy spintronic devices. The “magneto-ionic” mechanism, characterized by its operational efficiency, low energy consumption, reversibility, and non-volatility, provides innovative approaches for voltage control of exchange bias and has led to a series of significant advancements. This review systematically synthesizes the research progress on voltage control of exchange bias based on the magneto-ionic mechanism from the perspectives of ionic species, material systems, underlying mechanisms, and performance parameters. Furthermore, it undertakes a comparative evaluation of the voltage-controlled exchange bias by different ions, ultimately providing a forward-looking perspective on the future trajectory of this research domain.
format Article
id doaj-art-4f968c755aec4a98bba61fdad169fa1e
institution Kabale University
issn 2073-4352
language English
publishDate 2025-01-01
publisher MDPI AG
record_format Article
series Crystals
spelling doaj-art-4f968c755aec4a98bba61fdad169fa1e2025-01-24T13:28:13ZengMDPI AGCrystals2073-43522025-01-011517710.3390/cryst15010077Voltage Control of Exchange Bias via Magneto-Ionic ApproachesYifu Luo0Shengsheng Liu1Yuxin Li2Zhen Wang3Jie Zhang4Limei Zheng5Department of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, ChinaDepartment of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, ChinaDepartment of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, ChinaDepartment of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, ChinaDepartment of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, ChinaDepartment of Physics, Shandong University, Jinan 250100, ChinaThe exchange bias (EB) effect denotes a magnetic bias phenomenon originating from the interfacial exchange coupling at the ferromagnetic/antiferromagnetic materials, which plays an indispensable role in the functionality of various devices, such as magnetic random-access memory (MRAM) and sensors. Voltage control of exchange bias offers a promising pathway to significantly reduce device power consumption, effectively fostering the evolution of low-energy spintronic devices. The “magneto-ionic” mechanism, characterized by its operational efficiency, low energy consumption, reversibility, and non-volatility, provides innovative approaches for voltage control of exchange bias and has led to a series of significant advancements. This review systematically synthesizes the research progress on voltage control of exchange bias based on the magneto-ionic mechanism from the perspectives of ionic species, material systems, underlying mechanisms, and performance parameters. Furthermore, it undertakes a comparative evaluation of the voltage-controlled exchange bias by different ions, ultimately providing a forward-looking perspective on the future trajectory of this research domain.https://www.mdpi.com/2073-4352/15/1/77spintronicsvoltage control of magnetismmagneto-ionic mechanismexchange bias
spellingShingle Yifu Luo
Shengsheng Liu
Yuxin Li
Zhen Wang
Jie Zhang
Limei Zheng
Voltage Control of Exchange Bias via Magneto-Ionic Approaches
Crystals
spintronics
voltage control of magnetism
magneto-ionic mechanism
exchange bias
title Voltage Control of Exchange Bias via Magneto-Ionic Approaches
title_full Voltage Control of Exchange Bias via Magneto-Ionic Approaches
title_fullStr Voltage Control of Exchange Bias via Magneto-Ionic Approaches
title_full_unstemmed Voltage Control of Exchange Bias via Magneto-Ionic Approaches
title_short Voltage Control of Exchange Bias via Magneto-Ionic Approaches
title_sort voltage control of exchange bias via magneto ionic approaches
topic spintronics
voltage control of magnetism
magneto-ionic mechanism
exchange bias
url https://www.mdpi.com/2073-4352/15/1/77
work_keys_str_mv AT yifuluo voltagecontrolofexchangebiasviamagnetoionicapproaches
AT shengshengliu voltagecontrolofexchangebiasviamagnetoionicapproaches
AT yuxinli voltagecontrolofexchangebiasviamagnetoionicapproaches
AT zhenwang voltagecontrolofexchangebiasviamagnetoionicapproaches
AT jiezhang voltagecontrolofexchangebiasviamagnetoionicapproaches
AT limeizheng voltagecontrolofexchangebiasviamagnetoionicapproaches