Voltage Control of Exchange Bias via Magneto-Ionic Approaches
The exchange bias (EB) effect denotes a magnetic bias phenomenon originating from the interfacial exchange coupling at the ferromagnetic/antiferromagnetic materials, which plays an indispensable role in the functionality of various devices, such as magnetic random-access memory (MRAM) and sensors. V...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/15/1/77 |
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| Summary: | The exchange bias (EB) effect denotes a magnetic bias phenomenon originating from the interfacial exchange coupling at the ferromagnetic/antiferromagnetic materials, which plays an indispensable role in the functionality of various devices, such as magnetic random-access memory (MRAM) and sensors. Voltage control of exchange bias offers a promising pathway to significantly reduce device power consumption, effectively fostering the evolution of low-energy spintronic devices. The “magneto-ionic” mechanism, characterized by its operational efficiency, low energy consumption, reversibility, and non-volatility, provides innovative approaches for voltage control of exchange bias and has led to a series of significant advancements. This review systematically synthesizes the research progress on voltage control of exchange bias based on the magneto-ionic mechanism from the perspectives of ionic species, material systems, underlying mechanisms, and performance parameters. Furthermore, it undertakes a comparative evaluation of the voltage-controlled exchange bias by different ions, ultimately providing a forward-looking perspective on the future trajectory of this research domain. |
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| ISSN: | 2073-4352 |