Microstructural and Electrical Properties of Sn-Modified BaTiO3 Lead-Free Ceramics by Two-Step Sintering Method
Ba(Ti0.92Sn0.08)O3 lead-free ceramics were prepared using a two-step sintering (TSS) technique. Varying the first sintering temperature T1 (1400 and 1500°C) and the dwell time t1 (0, 15, and 30 min), we obtained dense ceramics which were then soaked at a constant temperature of 1000°C (T2) for 6 h (...
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Wiley
2018-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2018/9048062 |
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| author | Wichita Kayaphan Pornsuda Bomlai |
| author_facet | Wichita Kayaphan Pornsuda Bomlai |
| author_sort | Wichita Kayaphan |
| collection | DOAJ |
| description | Ba(Ti0.92Sn0.08)O3 lead-free ceramics were prepared using a two-step sintering (TSS) technique. Varying the first sintering temperature T1 (1400 and 1500°C) and the dwell time t1 (0, 15, and 30 min), we obtained dense ceramics which were then soaked at a constant temperature of 1000°C (T2) for 6 h (t2). The structural and electrical properties were investigated. XRD results indicated that all the ceramics showed a pure perovskite phase with tetragonal symmetry. Density and grain size increased with higher T1 temperatures and increased t1 dwell times. Enhanced electrical properties were achieved by sintering at the optimized T1 sintering temperature and t1 dwelling time. At the lower T1 sintering temperature of 1400°C, the dielectric and piezoelectric properties and the Curie temperature of the ceramics were improved significantly by increasing t1 dwell time. Further, increasing the sintering temperature T1 to 1500°C, excellent properties were obtained at t1 = 15 min which then deteriorated when t1 was increased to 30 min. The electrical properties of the sample sintered under the T1/t1/T2/t2 condition of “1500/15/1000/6” showed the best values. For this sample the piezoelectric coefficient (d33), dielectric permittivity (εr), loss factor (tanδ), and Curie temperature (TC) were 490 pC/N, 4385, 0.0272, and 48°C, respectively. |
| format | Article |
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| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2018-01-01 |
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| spelling | doaj-art-4e79de089afa4153b9857d56d40b0dfd2025-02-03T01:31:25ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422018-01-01201810.1155/2018/90480629048062Microstructural and Electrical Properties of Sn-Modified BaTiO3 Lead-Free Ceramics by Two-Step Sintering MethodWichita Kayaphan0Pornsuda Bomlai1Department of Materials Science and Technology, Faculty of Science, Prince of Songkla University, Hat Yai, Songkhla 90112, ThailandDepartment of Materials Science and Technology, Faculty of Science, Prince of Songkla University, Hat Yai, Songkhla 90112, ThailandBa(Ti0.92Sn0.08)O3 lead-free ceramics were prepared using a two-step sintering (TSS) technique. Varying the first sintering temperature T1 (1400 and 1500°C) and the dwell time t1 (0, 15, and 30 min), we obtained dense ceramics which were then soaked at a constant temperature of 1000°C (T2) for 6 h (t2). The structural and electrical properties were investigated. XRD results indicated that all the ceramics showed a pure perovskite phase with tetragonal symmetry. Density and grain size increased with higher T1 temperatures and increased t1 dwell times. Enhanced electrical properties were achieved by sintering at the optimized T1 sintering temperature and t1 dwelling time. At the lower T1 sintering temperature of 1400°C, the dielectric and piezoelectric properties and the Curie temperature of the ceramics were improved significantly by increasing t1 dwell time. Further, increasing the sintering temperature T1 to 1500°C, excellent properties were obtained at t1 = 15 min which then deteriorated when t1 was increased to 30 min. The electrical properties of the sample sintered under the T1/t1/T2/t2 condition of “1500/15/1000/6” showed the best values. For this sample the piezoelectric coefficient (d33), dielectric permittivity (εr), loss factor (tanδ), and Curie temperature (TC) were 490 pC/N, 4385, 0.0272, and 48°C, respectively.http://dx.doi.org/10.1155/2018/9048062 |
| spellingShingle | Wichita Kayaphan Pornsuda Bomlai Microstructural and Electrical Properties of Sn-Modified BaTiO3 Lead-Free Ceramics by Two-Step Sintering Method Advances in Materials Science and Engineering |
| title | Microstructural and Electrical Properties of Sn-Modified BaTiO3 Lead-Free Ceramics by Two-Step Sintering Method |
| title_full | Microstructural and Electrical Properties of Sn-Modified BaTiO3 Lead-Free Ceramics by Two-Step Sintering Method |
| title_fullStr | Microstructural and Electrical Properties of Sn-Modified BaTiO3 Lead-Free Ceramics by Two-Step Sintering Method |
| title_full_unstemmed | Microstructural and Electrical Properties of Sn-Modified BaTiO3 Lead-Free Ceramics by Two-Step Sintering Method |
| title_short | Microstructural and Electrical Properties of Sn-Modified BaTiO3 Lead-Free Ceramics by Two-Step Sintering Method |
| title_sort | microstructural and electrical properties of sn modified batio3 lead free ceramics by two step sintering method |
| url | http://dx.doi.org/10.1155/2018/9048062 |
| work_keys_str_mv | AT wichitakayaphan microstructuralandelectricalpropertiesofsnmodifiedbatio3leadfreeceramicsbytwostepsinteringmethod AT pornsudabomlai microstructuralandelectricalpropertiesofsnmodifiedbatio3leadfreeceramicsbytwostepsinteringmethod |