Noncontact Monitoring and Imaging of the Operation and Performance of Thin‐Film Field‐Effect Transistors
Abstract In this study, the first noncontact and non‐destructive methodology is developed for monitoring and imaging the operation and performance of thin‐film field‐effect transistors (TFTs) using second‐harmonic generation (SHG) imaging. By analyzing the SHG signal intensity, which is directly rel...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2025-02-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202407923 |
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| _version_ | 1832540891361837056 |
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| author | Kwangsik Jeong Dong yeob Shin Ji‐Min Park Dong‐Joon Yi Hyunmin Hong Hyun‐Suk Kim Kwun‐Bum Chung |
| author_facet | Kwangsik Jeong Dong yeob Shin Ji‐Min Park Dong‐Joon Yi Hyunmin Hong Hyun‐Suk Kim Kwun‐Bum Chung |
| author_sort | Kwangsik Jeong |
| collection | DOAJ |
| description | Abstract In this study, the first noncontact and non‐destructive methodology is developed for monitoring and imaging the operation and performance of thin‐film field‐effect transistors (TFTs) using second‐harmonic generation (SHG) imaging. By analyzing the SHG signal intensity, which is directly related to the electric field at the interface between the semiconductor channel and gate insulator, critical electrical parameters such as the threshold voltage (VTH) and flat‐band voltage (VFB) are successfully determined. These findings demonstrate a strong correlation between SHG signals and VTH and VFB in InGaZnO TFTs under various process conditions. Notably, the method achieves an unprecedented resolution of ΔVFB below 100 mV in assessing electrical properties through SHG measurements, surpassing conventional spectroscopy techniques. Furthermore, a system is developed to monitor and image the TFT array operation and performance, enabling us to distinguish between pass and fail devices and measure the VTH distribution based on the SHG intensity. This approach facilitates early failure detection and supports efficient curing during manufacturing, thereby marking significant advancements in TFT technology and quality control processes. |
| format | Article |
| id | doaj-art-4e4ceb7b81074b0c9c91a2d1cb5207af |
| institution | Kabale University |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-4e4ceb7b81074b0c9c91a2d1cb5207af2025-02-04T13:14:54ZengWileyAdvanced Science2198-38442025-02-01125n/an/a10.1002/advs.202407923Noncontact Monitoring and Imaging of the Operation and Performance of Thin‐Film Field‐Effect TransistorsKwangsik Jeong0Dong yeob Shin1Ji‐Min Park2Dong‐Joon Yi3Hyunmin Hong4Hyun‐Suk Kim5Kwun‐Bum Chung6Division of AI Semiconductor Yonsei University Wonju 26493 Republic of KoreaDepartment of Physics Dongguk University Seoul 04620 Republic of KoreaDepartment of Energy and Materials Engineering Dongguk University Seoul 04620 Republic of KoreaDepartment of Physics Dongguk University Seoul 04620 Republic of KoreaDivision of AI Semiconductor Yonsei University Wonju 26493 Republic of KoreaDepartment of Energy and Materials Engineering Dongguk University Seoul 04620 Republic of KoreaDepartment of Physics Dongguk University Seoul 04620 Republic of KoreaAbstract In this study, the first noncontact and non‐destructive methodology is developed for monitoring and imaging the operation and performance of thin‐film field‐effect transistors (TFTs) using second‐harmonic generation (SHG) imaging. By analyzing the SHG signal intensity, which is directly related to the electric field at the interface between the semiconductor channel and gate insulator, critical electrical parameters such as the threshold voltage (VTH) and flat‐band voltage (VFB) are successfully determined. These findings demonstrate a strong correlation between SHG signals and VTH and VFB in InGaZnO TFTs under various process conditions. Notably, the method achieves an unprecedented resolution of ΔVFB below 100 mV in assessing electrical properties through SHG measurements, surpassing conventional spectroscopy techniques. Furthermore, a system is developed to monitor and image the TFT array operation and performance, enabling us to distinguish between pass and fail devices and measure the VTH distribution based on the SHG intensity. This approach facilitates early failure detection and supports efficient curing during manufacturing, thereby marking significant advancements in TFT technology and quality control processes.https://doi.org/10.1002/advs.202407923amorphous oxide semiconductormethodology & inspectionsecond harmonic generation |
| spellingShingle | Kwangsik Jeong Dong yeob Shin Ji‐Min Park Dong‐Joon Yi Hyunmin Hong Hyun‐Suk Kim Kwun‐Bum Chung Noncontact Monitoring and Imaging of the Operation and Performance of Thin‐Film Field‐Effect Transistors Advanced Science amorphous oxide semiconductor methodology & inspection second harmonic generation |
| title | Noncontact Monitoring and Imaging of the Operation and Performance of Thin‐Film Field‐Effect Transistors |
| title_full | Noncontact Monitoring and Imaging of the Operation and Performance of Thin‐Film Field‐Effect Transistors |
| title_fullStr | Noncontact Monitoring and Imaging of the Operation and Performance of Thin‐Film Field‐Effect Transistors |
| title_full_unstemmed | Noncontact Monitoring and Imaging of the Operation and Performance of Thin‐Film Field‐Effect Transistors |
| title_short | Noncontact Monitoring and Imaging of the Operation and Performance of Thin‐Film Field‐Effect Transistors |
| title_sort | noncontact monitoring and imaging of the operation and performance of thin film field effect transistors |
| topic | amorphous oxide semiconductor methodology & inspection second harmonic generation |
| url | https://doi.org/10.1002/advs.202407923 |
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