Effects of Interfacial Charges On Doped and Undoped HFOX Stack Layer with Tin Metal Gate Electrode For Nano-Scaled CMOS Generation
A comparison of the interfacial charges present in the high-k stacked gate dielectrics for Zr-doped HfOx and undoped HfOx samples with titanium nitride (TiN) metal gate electrode is reported here. The metal gate work function value (4.31 eV) for TiN gate electrode was extracted from the TiN/SiO2 /p-...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%201/articles/jnep_2011_V3_N1(Part1)_162-169.pdf |
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