Dielectric and Interface Properties of Aluminum-Laminated Lanthanum Oxide on Silicon for Nanoscale Device Applications
By embedding an aluminum-laminated layer within La<sub>2</sub>O<sub>3</sub> thin films and subjecting them to high-temperature rapid thermal annealing, a La<sub>2</sub>O<sub>3</sub>/LaAl<i><sub>x</sub></i>O<i><sub>y&...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-06-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/13/963 |
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