Dielectric and Interface Properties of Aluminum-Laminated Lanthanum Oxide on Silicon for Nanoscale Device Applications

By embedding an aluminum-laminated layer within La<sub>2</sub>O<sub>3</sub> thin films and subjecting them to high-temperature rapid thermal annealing, a La<sub>2</sub>O<sub>3</sub>/LaAl<i><sub>x</sub></i>O<i><sub>y&...

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Bibliographic Details
Main Authors: Hei Wong, Weidong Li, Jieqiong Zhang, Jun Liu
Format: Article
Language:English
Published: MDPI AG 2025-06-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/15/13/963
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