Unraveling Abnormal Thermal Quenching of Sub‐Gap Emission in β‐Ga2O3
Abstract In this work, the optical transition of self‐trapped excitons (STEs) and the emergent green emission in β‐Ga2O3 samples with/without Sn impurities at various doping levels have been investigated via temperature‐ and power‐dependent photoluminescence. The ultraviolet (UV) emissions ≈ 3.40 eV...
Saved in:
| Main Authors: | Zhengpeng Wang, Fei Tang, Fang‐Fang Ren, Hongwei Liang, Xiangyuan Cui, Shijie Xu, Shulin Gu, Rong Zhang, Youdou Zheng, Jiandong Ye |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-01-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400315 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content
by: Jith Sarker, et al.
Published: (2025-01-01) -
Discovery of a Robust P‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8
by: Kaitian Zhang, et al.
Published: (2025-01-01) -
Single-Particle Radiation Sensitivity of Ultrawide-Bandgap Semiconductors to Terrestrial Atmospheric Neutrons
by: Daniela Munteanu, et al.
Published: (2025-02-01) -
Editorial: Wide-bandgap oxide semiconductors: unveiling excitonic potential
by: Pratap K. Sahoo, et al.
Published: (2025-06-01) -
Integration of 150 nm gate length N-polar GaN MIS-HEMT devices with all-around diamond for device-level cooling
by: Rohith Soman, et al.
Published: (2025-01-01)