Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors
Focusing on sub-10 nm Silicon CMOS device fabrication technology, we have incorporated ultrathin TiN metal gate electrode in Hafnium Silicate (HfSiO) based metal-oxide capacitors (MOSCAP) with carefully chosen Atomic Layer Deposition (ALD) process parameters. Gate element of the device has undergone...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2016-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2016/3740517 |
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