High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)<sub>2</sub>PbI<sub>4</sub>/GaN Heterojunction

High-Performance Self-Powered Dual-Mode Ultraviolet Photodetector Based on (PEA)<sub>2</sub>PbI<sub>4</sub>/GaN Heterojunction

Wide-bandgap semiconductors like GaN, known for their superior photoresponse and detection capabilities in the ultraviolet range, represent a foundational component in the design of advanced photodetectors, where the integration of materials with distinct spectral sensitivities into heterojunctions...

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Bibliographic Details
Main Authors:	Ang Bian, Songchao Shen, Chen Yang, Jun Dai
Format:	Article
Language:	English
Published:	MDPI AG 2024-11-01
Series:	Nanomaterials
Subjects:	perovskite wide-bandgap semiconductor ultraviolet detector heterojunction
Online Access:	https://www.mdpi.com/2079-4991/14/22/1819
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