Surface patterning of wide-gap semiconducting β-Ga2O3 thin films by area selective crystallization via room-temperature excimer laser annealing and low-toxic wet etching processes
In the present study, we have developed a fully room-temperature and low-toxic surface patterning method for β -Ga _2 O _3 , which consists of the area selective laser-induced crystallization of amorphous Ga _2 O _3 thin films and acid solution etching processes. Highly ( $\bar{2}$ 01)-oriented crys...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/ada247 |
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| author | Daishi Shiojiri Ryoya Kai Satoru Kaneko Akifumi Matsuda Mamoru Yoshimoto |
| author_facet | Daishi Shiojiri Ryoya Kai Satoru Kaneko Akifumi Matsuda Mamoru Yoshimoto |
| author_sort | Daishi Shiojiri |
| collection | DOAJ |
| description | In the present study, we have developed a fully room-temperature and low-toxic surface patterning method for β -Ga _2 O _3 , which consists of the area selective laser-induced crystallization of amorphous Ga _2 O _3 thin films and acid solution etching processes. Highly ( $\bar{2}$ 01)-oriented crystalline β -Ga _2 O _3 thin films with ∼70 nm thickness on α -Al _2 O _3 (0001) substrates were obtained through a combination of room-temperature deposition process and the subsequent excimer laser annealing at a deep ultraviolet wavelength of 248 nm. In conclusion, the area selective crystallized β -Ga _2 O _3 micropatterns were obtained through ultrasonic wet etching with 40% H _3 PO _4 aqueous solution to remove amorphous regions. |
| format | Article |
| id | doaj-art-4afd70fe463d434ea92e2fc9e605f65c |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-4afd70fe463d434ea92e2fc9e605f65c2025-01-28T05:05:49ZengIOP PublishingApplied Physics Express1882-07862025-01-0118101550110.35848/1882-0786/ada247Surface patterning of wide-gap semiconducting β-Ga2O3 thin films by area selective crystallization via room-temperature excimer laser annealing and low-toxic wet etching processesDaishi Shiojiri0https://orcid.org/0000-0001-8161-8969Ryoya Kai1Satoru Kaneko2Akifumi Matsuda3Mamoru Yoshimoto4Kanagawa Institute of Industrial Science and Technology , 705-1 Shimoimaizumi, Ebina-shi, Kanagawa 243-0435, JapanDepartment of Materials Science and Engineering, Tokyo Institute of Technology , 4259 Nagatsuta, Midori-ku, Yokohama-shi, Kanagawa, 226-8502, JapanKanagawa Institute of Industrial Science and Technology , 705-1 Shimoimaizumi, Ebina-shi, Kanagawa 243-0435, Japan; Department of Materials Science and Engineering, Tokyo Institute of Technology , 4259 Nagatsuta, Midori-ku, Yokohama-shi, Kanagawa, 226-8502, JapanDepartment of Materials Science and Engineering, Tokyo Institute of Technology , 4259 Nagatsuta, Midori-ku, Yokohama-shi, Kanagawa, 226-8502, JapanDepartment of Materials Science and Engineering, Tokyo Institute of Technology , 4259 Nagatsuta, Midori-ku, Yokohama-shi, Kanagawa, 226-8502, JapanIn the present study, we have developed a fully room-temperature and low-toxic surface patterning method for β -Ga _2 O _3 , which consists of the area selective laser-induced crystallization of amorphous Ga _2 O _3 thin films and acid solution etching processes. Highly ( $\bar{2}$ 01)-oriented crystalline β -Ga _2 O _3 thin films with ∼70 nm thickness on α -Al _2 O _3 (0001) substrates were obtained through a combination of room-temperature deposition process and the subsequent excimer laser annealing at a deep ultraviolet wavelength of 248 nm. In conclusion, the area selective crystallized β -Ga _2 O _3 micropatterns were obtained through ultrasonic wet etching with 40% H _3 PO _4 aqueous solution to remove amorphous regions.https://doi.org/10.35848/1882-0786/ada247surface patterningwide-gap semiconductorbeta gallium oxidewet etchinglow toxic processes |
| spellingShingle | Daishi Shiojiri Ryoya Kai Satoru Kaneko Akifumi Matsuda Mamoru Yoshimoto Surface patterning of wide-gap semiconducting β-Ga2O3 thin films by area selective crystallization via room-temperature excimer laser annealing and low-toxic wet etching processes Applied Physics Express surface patterning wide-gap semiconductor beta gallium oxide wet etching low toxic processes |
| title | Surface patterning of wide-gap semiconducting β-Ga2O3 thin films by area selective crystallization via room-temperature excimer laser annealing and low-toxic wet etching processes |
| title_full | Surface patterning of wide-gap semiconducting β-Ga2O3 thin films by area selective crystallization via room-temperature excimer laser annealing and low-toxic wet etching processes |
| title_fullStr | Surface patterning of wide-gap semiconducting β-Ga2O3 thin films by area selective crystallization via room-temperature excimer laser annealing and low-toxic wet etching processes |
| title_full_unstemmed | Surface patterning of wide-gap semiconducting β-Ga2O3 thin films by area selective crystallization via room-temperature excimer laser annealing and low-toxic wet etching processes |
| title_short | Surface patterning of wide-gap semiconducting β-Ga2O3 thin films by area selective crystallization via room-temperature excimer laser annealing and low-toxic wet etching processes |
| title_sort | surface patterning of wide gap semiconducting β ga2o3 thin films by area selective crystallization via room temperature excimer laser annealing and low toxic wet etching processes |
| topic | surface patterning wide-gap semiconductor beta gallium oxide wet etching low toxic processes |
| url | https://doi.org/10.35848/1882-0786/ada247 |
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