Surface patterning of wide-gap semiconducting β-Ga2O3 thin films by area selective crystallization via room-temperature excimer laser annealing and low-toxic wet etching processes
In the present study, we have developed a fully room-temperature and low-toxic surface patterning method for β -Ga _2 O _3 , which consists of the area selective laser-induced crystallization of amorphous Ga _2 O _3 thin films and acid solution etching processes. Highly ( $\bar{2}$ 01)-oriented crys...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/ada247 |
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| Summary: | In the present study, we have developed a fully room-temperature and low-toxic surface patterning method for β -Ga _2 O _3 , which consists of the area selective laser-induced crystallization of amorphous Ga _2 O _3 thin films and acid solution etching processes. Highly ( $\bar{2}$ 01)-oriented crystalline β -Ga _2 O _3 thin films with ∼70 nm thickness on α -Al _2 O _3 (0001) substrates were obtained through a combination of room-temperature deposition process and the subsequent excimer laser annealing at a deep ultraviolet wavelength of 248 nm. In conclusion, the area selective crystallized β -Ga _2 O _3 micropatterns were obtained through ultrasonic wet etching with 40% H _3 PO _4 aqueous solution to remove amorphous regions. |
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| ISSN: | 1882-0786 |