APA (7th ed.) Citation

Shiojiri, D., Kai, R., Kaneko, S., Matsuda, A., & Yoshimoto, M. Surface patterning of wide-gap semiconducting β-Ga2O3 thin films by area selective crystallization via room-temperature excimer laser annealing and low-toxic wet etching processes. IOP Publishing.

Chicago Style (17th ed.) Citation

Shiojiri, Daishi, Ryoya Kai, Satoru Kaneko, Akifumi Matsuda, and Mamoru Yoshimoto. Surface Patterning of Wide-gap Semiconducting β-Ga2O3 Thin Films by Area Selective Crystallization via Room-temperature Excimer Laser Annealing and Low-toxic Wet Etching Processes. IOP Publishing.

MLA (9th ed.) Citation

Shiojiri, Daishi, et al. Surface Patterning of Wide-gap Semiconducting β-Ga2O3 Thin Films by Area Selective Crystallization via Room-temperature Excimer Laser Annealing and Low-toxic Wet Etching Processes. IOP Publishing.