Single-photon emitters in PECVD-grown silicon nitride films: from material growth to photophysical properties

Single-photon emitters in PECVD-grown silicon nitride films: from material growth to photophysical properties

Silicon nitride (SiN) is a key material for quantum photonics due to its wide transparency window, high refractive index, low optical losses, and semiconductor foundry compatibility. We study the formation of single-photon emitters in SiN films grown by plasma-enhanced chemical vapor deposition (PEC...

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Bibliographic Details
Main Authors: Martin Zachariah O., Senichev Alexander, Maan Pranshu, Ozlu Mustafa G., Marinova Miroslava, Shang Zhongxia, Lagutchev Alexei, Boltasseva Alexandra, Shalaev Vladimir M.
Format: Article
Language:English
Published: De Gruyter 2025-04-01
Series:Nanophotonics
Subjects:
quantum emitters
single-photon emitters
silicon nitride
chemical vapor deposition
quantum photonics
Online Access:https://doi.org/10.1515/nanoph-2024-0506
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https://doi.org/10.1515/nanoph-2024-0506

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