Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy

Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy

Abstract Transparent oxide thin film transistors (TFTs) are an important ingredient of transparent electronics. Their fabrication at the back‐end‐of‐line (BEOL) opens the door to novel strategies to more closely integrate logic with memory for data‐intensive computing architectures that overcome the...

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Bibliographic Details
Main Authors: Felix V.E. Hensling, Patrick Vogt, Jisung Park, Shun‐Li Shang, Huacheng Ye, Yu‐Mi Wu, Kathleen Smith, Veronica Show, Kathy Azizie, Hanjong Paik, Debdeep Jena, Huili G. Xing, Y. Eren Suyolcu, Peter A. van Aken, Suman Datta, Zi‐Kui Liu, Darrell G. Schlom
Format: Article
Language:English
Published: Wiley-VCH 2025-03-01
Series:Advanced Electronic Materials
Subjects:
back‐end‐of‐line
field‐effect transistor
FET
molecular‐beam epitaxy
oxide electronics
transparent electronics
Online Access:https://doi.org/10.1002/aelm.202400499
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https://doi.org/10.1002/aelm.202400499

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